Abstract: A method for readout of a singlet-triplet qubit in a donor based quantum processing element is disclosed. The method includes: initialising the singlet-triplet qubit in a ground state |G; performing a shelving readout; using a final measured charge configuration of the singlet-triplet qubit to determine information about a current Zeeman energy difference; and using the information about the current Zeeman energy difference to adjust mapping of the shelving readout.

Abstract: Quantum processing element and method to perform logic operations on a quantum processing element are disclosed. The quantum processing element includes: a semiconductor, a dielectric material forming an interface with the semiconductor, a plurality of dopant dots embedded in the semiconductor, each of the dopant dots comprising one or more dopant atoms and one or more electrons or holes confined within the dopant dots, wherein spin of an unpaired electron or hole of each dopant dot forms at least one qubit. The method includes the step of: controlling orientation of nuclear spins of the one or more dopant atoms in a pair of dopant dots and/or controlling a hyperfine interaction between nuclear spins of one or more dopant atoms and electron or hole spins of the unpaired electron or hole in the pair of dopant dots to perform a quantum logic operation on a corresponding pair of qubits.

Abstract: A quantum processing system and method of operating the same are disclosed. The system includes a first qubit comprising a first unpaired electron bound to a first pair of donor clusters embedded in a semiconductor substrate at a distance from the semiconductor surface. each donor cluster in the first pair of donor clusters including at least one donor atom. The system further includes a second qubit comprising a second unpaired electron bound to a second pair of donor clusters embedded in the semiconductor substrate at a distance from the semiconductor surface. each donor cluster in the second pair of donor clusters including at least one donor atom. In addition, a microwave resonator is located between the first qubit and the second qubit, wherein a first end of the microwave resonator is coupled to the first qubit and a second end of the microwave resonator is coupled to the second qubit. A photon of the microwave resonator couples the first qubit and the second qubit.

Abstract: A quantum processing element is disclosed. The element includes a semiconductor substrate, a dielectric material forming an interface with the semiconductor substrate, and a donor molecule embedded in the semiconductor. The donor molecule includes a plurality of dopant dots embedded in the semiconductor, each dopant dot includes one or more dopant atoms, and one or more electrons/holes confined to the dopant dots. A distance between the dopant dots is between 3 and 9 nanometres.

Abstract: A method for readout of a singlet-triplet qubit in a donor based quantum processing element is disclosed. The method includes: initialising the singlet-triplet qubit in a ground state |G; performing a shelving readout; using a final measured charge configuration of the singlet-triplet qubit to determine information about a current Zeeman energy difference; and using the information about the current Zeeman energy difference to adjust mapping of the shelving readout.

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

Abstract: A tunnel field effect transistor (TFET) includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

Abstract: A tunnel field effect transistor (TFET) device is disclosed. The TFET includes a substrate, heavily doped source and drain regions disposed at opposite ends of the substrate separated by a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length defined along the longitudinal axis that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis.

Abstract: A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.