Abstract: A first decoder performs decoding on each data set in a first plurality of data sets using a first code; each data set in the first plurality is stored on a different NAND Flash chip. It is determined if the first decoding is successful; if not, a second decoder performs a second decoding on each data set in a second plurality of data sets using a second code; each data set in the second plurality includes at least some data, after the first decoding using the first code, from each data set in the first plurality. The first decoder performs a third decoding on each data set in the first plurality using the first code, where each data set in the first plurality includes at least some data, after the second decoding using the second code, from each data set in the second plurality.

Abstract: Data which is read back from a multi-level storage device is received. For each bin in a set of bins, a portion of reads which fall into that particular bin and which are to be maintained is received. The set of bins is adjusted so that the read-back data, after assignment using the adjusted set of bins, matches the received portions of reads which are to be maintained.

Abstract: For each of a plurality of locations in flash memory, a number of pulses required to change a value stored in that location is obtained. From the plurality of locations, a location to write to is selected using the obtained number of pulses. The selected location is written to.

Abstract: A number of pulses to modify information stored in a given location in a plurality of locations is obtained for each of the plurality of locations in flash memory. A location having the largest number of pulses is selecting from the plurality of locations. The selected location is written to.

Abstract: A value read back from storage and a set of bins are received. Each bin in the set of bins has a bin range. A bin corresponding to the read-back value is selected from the set of bins. The bin range of the selected bin is adjusted, based at least in part on the read-back value, so that the read-back value is more centered within the selected bin after adjustment.

Abstract: A number of pulses to modify information stored in a given location in a plurality of locations is obtained for each of the plurality of locations in flash memory. A location having the largest number of pulses is selecting from the plurality of locations. The selected location is written to.

Abstract: Flash memory is written to by determining a measure of health for each of a plurality of locations in flash memory. At least one of the plurality of locations in flash memory is selected based at least in part on the determined measures of health and the selected location(s) in flash memory is/are written to.

Abstract: A read value that is read from a multi-level storage device is received, as are a set of bins having bin ranges. A set of amounts corresponding to the set of bins is received where each amount in the set indicates an amount of read values which fall into the corresponding bin. One or more of the bin ranges is adjusted, including by: in the event there is a first bin range that is less than the received read value, increasing at least the first bin range and in the event there is a second bin range that is greater than the received read value, decreasing at least the second bin range.

Abstract: Data is stored from a host. A flash memory is divided into a plurality of memory groups, the memory groups each comprising a plurality of flash memory blocks. A first portion of one of the plurality of memory groups is allocated for storing parity data of an error-correcting code for the memory group. A second portion of the memory group is allocated for storing data from the host. A flash memory block in the memory group is erased prior to writing the data from the host, wherein the flash memory block contains valid data. The erased valid data is recovered using the error-correcting code.

Abstract: A read value that is read from a multi-level storage device is received, as are a set of bins having bin ranges and (for each of the bins in the set) a corresponding portion of read values which fall into that particular bin. One or more of the bin ranges is adjusted such that the received portions of read values remain substantially the same after adjustment and after assignment of the read value to one of the set of bins after adjustment.

Abstract: A technique for blind channel estimation is disclosed herein. A read value that is read from a multi-level storage device is received, as are a set of bins having bin ranges and (for each of the bins in the set) a corresponding portion of read values which fall into that particular bin. One or more of the bin ranges is adjusted such that the received portions of read values remain substantially the same after adjustment and after assignment of the read value to one of the set of bins after adjustment.

Abstract: Method for the purification of a volatile metal hydride comprising obtaining a volatile metal hydride feed containing one or more acidic impurities, one of which is a sulfur-containing impurity; contacting the feed with an alkaline material and reacting at least a portion of the sulfur-containing impurity with the alkaline material to remove a portion of the sulfur-containing impurity from the feed and provide an intermediate purified material; and contacting the intermediate purified product with an adsorbent material to remove at least a portion of the sulfur-containing impurity from the intermediate purified material and provide a purified volatile metal hydride product.

Abstract: Methods are provided for detecting oxidative intermediates in biological samples. These methods may be used to advantage to assess oxidative kidney injury and mitigation of kidney injury in response to drugs, diet and other therapies in patients with chronic kidney disease.

Abstract: Protection from current and voltage spikes is provided for a laser array by attaching a reverse diode laser array to shared contact pads before the first laser array is bonded to those pads. The arrangement provides for surge protection even during fabrication of the laser package where device failure results from power surges before surge protection circuitry is in place. Surge protection is afforded by having a reverse diode of the reverse diode array electrically in parallel with a corresponding laser diode of the protected array when activated.

Abstract: A reduced, lateral mode laser diode is fabricated using a self-aligning process which produces a well controlled weakly index-guided waveguide with strong current confinement. The structure includes ion implants for controlling current injection into the active region from the top of the ridge. The number of modes may be reduced to unity, resulting in a single lateral mode laser. A laser diode array is fabricated in the same way.

Abstract: A laser package includes a housing and a subassembly to which the critical components of the laser package are mounted. The subassembly is structured to preserve component alignment even in the presence of thermal excursions by ensuring that any movement which might occur effects all the components in a way to preserve alignment. The subassembly is easily removable from the housing and thus permits replacement if a failure should occur. A reverse diode is included to provide a path for reverse currents which otherwise would be damaging to the active laser diode.