Abstract: A solid state light source includes a substrate having a top surface and a bottom surface, and at least one optically active layer on the top surface of the substrate. At least one of the top surface, the bottom surface, the optically active layer or an emission surface on the optically active layer includes a patterned surface that includes a plurality of tilted surface features that have a high elevation portion and a low elevation portion that define a height (h), and wherein the plurality of tilted surface features define a minimum lateral dimension (r). The plurality of tilted surface features provide at least one surface portion that has a surface tilt angle from 3 to 85 degrees. The patterned surface has a surface roughness <10 nm rms, and h/r is ?0.05.

Abstract: A solid state light source includes a substrate having a top surface and a bottom surface, and at least one optically active layer on the top surface of the substrate. At least one of the top surface, the bottom surface, the optically active layer or an emission surface on the optically active layer includes a patterned surface that includes a plurality of tilted surface features that have a high elevation portion and a low elevation portion that define a height (h), and wherein the plurality of tilted surface features define a minimum lateral dimension (r). The plurality of tilted surface features provide at least one surface portion that has a surface tilt angle from 3 to 85 degrees. The patterned surface has a surface roughness <10 nm rms, and h/r is ?0.05.

Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of eth silicon carbide surface is removed.

Abstract: A method of chemical-mechanical fabrication (CMF) for forming articles having tilted surface features. A substrate is provided having a patterned surface including two different layer compositions or a non-planar surface having at least one protruding or recessed feature, or both. The patterned surface are contacted with a polishing pad having a slurry composition, wherein a portion of surface being polished polishes at a faster polishing rate as compared to another portion to form at least one tilted surface feature. The tilted surface feature has at least one surface portion having a surface tilt angle from 3 to 85 degrees and a surface roughness<3 nm rms. The tilted surface feature includes a post-CMF high elevation portion and a post-CMF low elevation portion that defines a maximum height (h), wherein the tilted surface feature defines a minimum lateral dimension (r), and h/r is ?0.05.

Abstract: The present invention provides an application specific integrated circuit and a method of operation thereof. In one advantageous embodiment, the application specific integrated circuit includes a programmable logic core having an array of dynamically configurable arithmetic logic units. This particular embodiment further includes a network interface subsystem that includes a media access controller. The network interface is configured to employ a first portion of the programmable logic core that interfaces with the media access controller and that is configurable to process control data. This embodiment further includes a data transmission subsystem associated with a memory device, and configured to employ a second portion of the programmable logic core that stores received data from the network interface subsystem to the memory device and sends transmission data from the memory device to the network interface subsystem in response to an instruction from a host system.

Abstract: Disclosed are methods using pulsed laser ablation to prepare coated drug particles of uniform size and thickness. The coated drug particles ranged in size from several nanometers to several millimeters in diameter size, and were coated with organic polymer particle having average diameter sizes from about 1 to 50 nm. In illustrative embodiments, coated drug particles or drug delivery particles are disclosed comprising a biodegradable or biocompatible polymer coating having controlled thickness and controlled coating uniformity, that offer superior pharmaceutical properties for controlled delivery and increased bioavailability.

Abstract: A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry can be used to polish a structure including silicon dioxide or a low K dielectric film and a silicon nitride containing film, such as to form a shallow trench isolation (STI) structure or a metal-dielectric structure. The silicon nitride containing film surface substantially adsorbs the selective adsorption additive, whereas the silicon dioxide or low K dielectric film shows non-substantial adsorption characteristics to the adsorption additive.

Abstract: A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.

Abstract: The present invention provides a field programmable universal serial bus application specific integrated circuit and a method of operation thereof. In one advantageous embodiment, the field programmable universal serial bus application specific integrated circuit includes a universal serial bus function core configured to transmit and receive data via a universal serial bus and a programmable logic core having an array of dynamically configurable arithmetic logic units. The programmable logic core is configured to interface with the universal serial bus function core and implement at least one application level function capable of performing protocol conversion to at least one processor bus protocol.

Abstract: A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry can be used to polish a structure including silicon dioxide or a low K dielectric film and a silicon nitride containing film, such as to form a shallow trench isolation (STI) structure or a metal-dielectric structure. The silicon nitride containing film surface substantially adsorbs the selective adsorption additive, whereas the silicon dioxide or low K dielectric film shows non-substantial adsorption characteristics to the adsorption additive.

Abstract: A cathode composition for lithium ion and lithium metal batteries includes a transitional metal oxide, the transitional metal oxide comprising a plurality of compositionally defective crystals. The defective crystals have an enhanced oxygen content as compared to a bulk equilibrium counterpart crystal. An oxygen-rich lithium manganese oxide composition can provide an improved cathode which allows formation of rechargeable batteries having enhanced characteristics. Cathodes can exhibit high capacity (>150 mAh/gm), long cycle life (less than 0.05% capacity loss per cycle for 700 cycles), and high discharge rates (>25 C for a 25% capacity loss).

Abstract: A slurry for chemical mechanical polishing (CMP) of a refractory metal based barrier film includes a plurality of composite particles and at least one selective adsorption additive, such as a surfactant or a polymer. The composite particles have an inorganic core surrounded by the selective adsorption additive. The refractory metal based barrier film does not substantially adsorb the selective adsorption additive surfactant, while other exposed films substantially adsorb the surfactant. A method for chemical mechanical polishing (CMP) a refractory metal based barrier film includes the steps of providing a slurry including a plurality of composite particles and at least one selective adsorption additive.

Abstract: A slurry for chemical mechanical polishing (CMP) of a copper or silver containing film provides at least one reactant for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film. The soft layer has a hardness less than the copper or silver film. The slurry preferably includes either no particles or particles which are softer than the copper or silver layer. A method for chemical mechanical polishing (CMP) a copper or silver containing film includes the steps of providing a slurry for reacting with the copper or silver film to form a soft layer on the surface of the copper or silver film and uses either no particles or particles softer than the copper or silver film, applying the slurry to the copper or silver film to form the soft layer, and removing the soft layer using a polishing pad.

Abstract: A slurry and method for chemical mechanical polishing (CMP) a structure including at least one metal based film and at least one underlying dielectric film includes at least one selective adsorption additive, such as a surfactant or a polymer. The metal film does not substantially adsorb the selective adsorption additive surfactant, while dielectric film substantially adsorbs the selective adsorption additive. A plurality of composite particles can be added, such as inorganic cores surrounded by the selective adsorption additive. In another embodiment, a slurry and method for polishing a metal film and an underlying dielectric film includes polishing during a first time interval using a first slurry composition and polishing during a second time interval with a second slurry composition, wherein a selectivity ratio for metal/dielectric polishing using the first slurry composition to the metal/dielectric selectivity using the second slurry composition is at least 1.3.

Abstract: A method of forming a crystalline thin film from an amorphous semiconductor thin film such as amorphous silicon, by providing a generally planar nucleation inducing member, such as a crystalline silicon wafer, having a number of micro-scale surface contact points and with a hardness equal to or greater than the hardness of the amorphous semiconductor thin film, contacting under pressure the surface contact points of the nucleation inducing member with the exposed surface of the amorphous thin film to form an assembly, annealing the assembly at between 300 to 700 degrees C. for 1 to 24 hours to crystallize the amorphous thin film, and removing the nucleation inducing member.

Abstract: A method for increasing the surface area and roughness of metals, ceramics and composites on a micro-scale, and the surfaces themselves, is disclosed whereby a laser beam having a radiation wavelength of from UV to infrared is pulsed onto the surface of the material. The energy density of the radiation is between 0.01 to 15 J/cm.sup.2 and at least 50 pulses of radiation having duration of from 1 picosecond to 1 millisecond are used on each area. The surface structures formed are semi-periodic and are from 1/4 to several hundred microns in magnitude.

Abstract: A method of producing an improved adherent interface between a film or coating and a substrate of metal, ceramic, or composite material by laser treatment of the surface. Semi-periodic microscale surface structures of less than 200 microns in magnitude are made by laser radiation of at least 50 pulses with an energy density of 0.01 to 15 J/cm.sup.2 and a duration of 100 femtoseconds to 1 millisecond on each surface area treated.

Abstract: A method for creating a patterned thin film of a high surface energy material on a substrate comprising the steps of creating a photomask pattern on the substrate using photolithography, providing an oppositely charged surface on the substrate and photomask, if such does not exist, from that of particles of the high surface energy material, removing the photomask and exposing the substrate to an aqueous colloidal suspension of particles composed of the high surface energy material to adsorb seed particles onto the surface of the substrate, or removing the photomask after adsorbing seed particles to the surface, and then depositing a uniform thin film of the high surface energy material by chemical vapor deposition onto the seeded substrate.

Abstract: A method is provided for improving the scratch or surface wear resistance of substrates by embedding discrete, hard particles within the surface layer of the substrate. Discrete, hard particles are applied to the substrate surface and then embedded within and bonded to the surface layer of the substrate by softening the substrate surface layer by either thermal or solvent means. Suitable substrate materials include thermoplastics, thermoset plastics, polymers, glass, soft metals, and composites. Suitable hard particles include diamond, silicon dioxide, aluminum oxide, cubic boron nitride, boron carbide, silicon carbide, silicon nitride, tantalum carbide, titanium carbide, titanium nitride, tungsten carbide, and zirconia alloys containing at least one phase stabilization additive selected from the group yttrium, hafnium, calcium, magnesium, and cesium. Scratch resistant substrates or articles having discrete, hard particles embedded within the surface layer of the substrate or article are also provided.

Abstract: A method for creating a uniform thin film of a high surface energy material on a substrate comprising the steps of providing an oppositely charged surface on the substrate, if such does not exist, from that of particles of the high surface energy material, exposing the substrate to an aqueous colloidal suspension of particles composed of the high surface energy material to adsorb seed particles onto the surface of the substrate, and then depositing a uniform thin film of the high surface energy material by chemical vapor deposition onto the seeded substrate.