Abstract: Plasma systems with magnetic filter devices to alter film deposition/etching characteristics by altering the effective magnetic field distribution. The magnetic filter devices are placed between the magnet or magnets and a target, typically a semiconductor wafer, and selected and configured to alter the magnetic field to obtain the desired processing results. For deposition, the magnetic filter may be chosen to provide more uniform deposition, to provide increased deposition rates at or adjacent the edges of a wafer to compensate for increased etching rates at the edges of a wafer in a subsequent etching or polishing process. For annealing and doping, the magnetic field may be altered to provide more uniform equivalent annealing or doping across the wafer. Various applications are disclosed.

Abstract: A method for forming shallow junctions in a substrate. The substrate is masked with a first mask to selectively cover first portions of the substrate and selectively expose second portions of the substrate. A first dopant is implanted substantially within a first depth zone through the second portions of the substrate. The first depth zone extends from a first depth to a second depth, and the first depth is shallower than the second depth. The substrate is annealed for a first time to form a noncontiguous buried insulating layer substantially within the first depth zone in the second portions of the substrate. The substrate is masked with a second mask to selectively cover third portions of the substrate and selectively expose fourth portions of the substrate. The fourth portions of the substrate at least partially overlap the second portions of the substrate. A second dopant is implanted substantially within a second depth zone through the fourth portions of the substrate.