Abstract: A light emitting device with a composite contact prevents performance degradation caused during laser lift off. The composite contact includes a transparent and conductive layer absorbing the laser to prevent it from reaching the metal trench while serving as a current spreading layer, and includes one or more other layers such as a dielectric spacer preventing optical loss, and a thin contact layer providing better contact with the metal trench than the transparent conductive layer might by itself.

Abstract: A light-emitting apparatus includes a carrier substrate, an array of light-emitting devices on the carrier substrate, and carrier posts connecting the light-emitting devices to the carrier substrate spaced apart from the carrier substrate. The carrier post forms the only attachment between each light-emitting device and the carrier substrate, is positioned within the areal extent of the light-emitting device, and is attached to the light-emitting device at an attachment area thereof that occupies only a fractional portion of the areal extent of the light-emitting device. A transfer substrate can adhere to the light-emitting devices and then be separated from the carrier substrate with the light-emitting devices adhered thereto. The light-emitting devices can then be attached to a backplane, interconnect layer, or circuit board and the transfer layer removed leaving the behind the attached light emitting devices.

Abstract: Three sets of LED layers each include p-doped and n-doped layers with an active layer therebetween, a tunnel junction layer against the p-doped layer, and an additional n-doped layer against the tunnel junction layer. The first and second LED layer sets are separated by a first semi-insulating semiconductor layer; the second and third LED layer sets are separated by a second semi-insulating semiconductor layer; the second LED layer set is between the first and second semi-insulating semiconductor layers; the third semiconductor layer set is between the second semi-insulating layer and a dielectric layer. Cathode contacts extend through the dielectric layer to the n-doped layers; anode contacts extend through the dielectric layer to the additional n-doped layers. The three LED layer sets can independently emit light at three different corresponding wavelengths, e.g., red, green, and blue light that can encompass an sRGB color gamut or can yield white light.

Abstract: AlInGaP LEDs and microLEDs comprise a transparent conductive oxide (TCO) layer disposed on and making Ohmic contact to an n-type AlInGaP layer. The TCO layer may be used to make electrical contact to the n-type side of the diode junction in the LED without obstructing transmission of light out of the LED through the n-type surface on which the TCO layer is disposed. The TCO layer may improve n-side current spreading. The TCO layer may be used to interconnect the n-side contacts of adjacent AlInGaP microLEDs in an array to form a shared n-side electrical contact with little or no optical cross-talk. The TCO layer may improve the reflectivity of an n-side metal contact arranged to direct light out of the LED.

Abstract: Micro-light emitting diode (uLED) devices comprise: a source wafer comprising a uLED die bonded to a target wafer. Wafer n-contacts are directly bonded to a plurality of die n-contacts; wafer p-contacts are directly bonded to die p-contacts; and wafer dielectric material is directly bonded to die dielectric material; the wafer dielectric material isolates the wafer n-contacts and the wafer p-contacts.

Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.