Patents by Inventor Rajkumar Jakkaraju
Rajkumar Jakkaraju has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9881787Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.Type: GrantFiled: June 16, 2016Date of Patent: January 30, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Chien-Teh Kao, Benjamin Schmiege, Xuesong Lu, Juno Yu-Ting Huang, Yu Lei, Yung-Hsin Lee, Srinivas Gandikota, Rajkumar Jakkaraju, Chikuang Charles Wang, Ghazal Saheli, Benjamin C. Wang, Xinliang Lu, Pingyan Lei
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Patent number: 9583349Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.Type: GrantFiled: November 25, 2014Date of Patent: February 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Srinivas Gandikota, Zhendong Liu, Jianxin Lei, Rajkumar Jakkaraju
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Publication number: 20160372324Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.Type: ApplicationFiled: June 16, 2016Publication date: December 22, 2016Inventors: Chien-Teh Kao, Benjamin Schmiege, Xuesong Lu, Juno Yu-Ting Huang, Yu Lei, Yung-Hsin Lee, Srinivas Gandikota, Rajkumar Jakkaraju, Chikuang Charles Wang, Ghazal Saheli, Benjamin C. Wang, Xinliang Lu, Pingyan Lei
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Patent number: 9514933Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.Type: GrantFiled: December 31, 2014Date of Patent: December 6, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Yu Lei, Srinivas Gandikota, Seshadri Ganguli, Bo Zheng, Rajkumar Jakkaraju, Martin Jeff Salinas, Benjamin Schmiege
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Patent number: 9461137Abstract: Embodiments of the present disclosure include tungsten silicide nitride films and methods for depositing tungsten silicide nitride films. In some embodiments, a thin film microelectronic device includes a semiconductor substrate having a tungsten gate electrode stack comprising a tungsten silicide nitride film having a formula WxSiyNz, wherein x is about 19 to about 22 atomic percent, y is about 57 to about 61 atomic percent, and z is about 15 to about 20 atomic percent. In some embodiments, a method of processing a substrate disposed in physical vapor deposition (PVD) chamber, includes: exposing a substrate having a gate insulating layer to a plasma formed from a first process gas comprising nitrogen and argon; sputtering silicon and tungsten material from a target disposed within a processing volume of the PVD chamber; depositing atop the gate insulating layer a tungsten silicide nitride layer as described above; and depositing a bulk tungsten layer atop the tungsten silicide nitride layer.Type: GrantFiled: November 11, 2015Date of Patent: October 4, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Jothilingam Ramalingam, Rajkumar Jakkaraju, Jianxin Lei, Zhiyong Wang
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Patent number: 9162930Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.Type: GrantFiled: April 22, 2013Date of Patent: October 20, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Yong Cao, Kazuya Daito, Rajkumar Jakkaraju, Xianmin Tang
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Publication number: 20150206756Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.Type: ApplicationFiled: November 25, 2014Publication date: July 23, 2015Inventors: Srinivas GANDIKOTA, Zhendong LIU, Jianxin LEI, Rajkumar JAKKARAJU
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Publication number: 20150194298Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.Type: ApplicationFiled: December 31, 2014Publication date: July 9, 2015Inventors: Yu Lei, Srinivas Gandikota, Seshadri Ganguli, Bo Zheng, Rajkumar Jakkaraju, Martin Jeff Salinas, Benjamin Schmiege
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Publication number: 20150114827Abstract: Methods for forming a metal dielectric etching stop layer onto a substrate with good etching selectivity and low wet etching rate. In one embodiment, a method of sputter depositing a metal dielectric etching stop layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least N2 gas into the processing chamber, applying a RF power to form a plasma from the gas mixture to sputter source material from a target disposed in the processing chamber, maintaining a substrate temperature less than about 320 degrees Celsius, and depositing a metal dielectric etching stop layer onto the substrate from the sputtered source material.Type: ApplicationFiled: October 24, 2013Publication date: April 30, 2015Inventors: Yong CAO, Tingjun XU, Rajkumar JAKKARAJU, Rongjun WANG
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Patent number: 8778797Abstract: A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period.Type: GrantFiled: September 23, 2011Date of Patent: July 15, 2014Assignee: Novellus Systems, Inc.Inventors: Juwen Gao, Rajkumar Jakkaraju, Michal Danek, Wei Lei
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Publication number: 20140001576Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.Type: ApplicationFiled: June 19, 2013Publication date: January 2, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Srinivas GANDIKOTA, Zhendong LIU, Jianxin LEI, Rajkumar JAKKARAJU
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Patent number: 8585873Abstract: A method of sputtering with sputtering apparatus is for depositing a layer upon a substrate. The apparatus includes a sputter target with a face exposed to the substrate and a magnetron providing a magnetic field that moves relative to the target face. The speed of movement of the field is controlled such that the uniformity of the deposition on the substrate is enhanced. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed. The selected speed may vary over the life of the target, with increased speeds becoming desirable as the target thins.Type: GrantFiled: October 12, 2005Date of Patent: November 19, 2013Assignee: Aviza Technology LimitedInventors: Mark Ashley Ford, Rajkumar Jakkaraju
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Publication number: 20130296158Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.Type: ApplicationFiled: April 22, 2013Publication date: November 7, 2013Inventors: Yong CAO, Kazuya DAITO, Rajkumar JAKKARAJU, Xianmin TANG
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Publication number: 20120077342Abstract: A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period.Type: ApplicationFiled: September 23, 2011Publication date: March 29, 2012Inventors: Juwen Gao, Rajkumar Jakkaraju, Michal Danek, Wei Lei
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Patent number: 7327073Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.Type: GrantFiled: August 4, 2005Date of Patent: February 5, 2008Assignee: Aviza Technologies LimitedInventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
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Patent number: 7141913Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.Type: GrantFiled: November 29, 2004Date of Patent: November 28, 2006Assignee: Trikon Technologies LimitedInventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
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Publication number: 20060081458Abstract: A method of sputtering with sputtering apparatus is for depositing a layer upon a substrate. The apparatus includes a sputter target with a face exposed to the substrate and a magnetron providing a magnetic field that moves relative to the target face. The speed of movement of the field is controlled such that the uniformity of the deposition on the substrate is enhanced. A particular method includes monitoring uniformity verses speed, selecting the speed that gives the preferred uniformity and controlling the field to the selected speed. The selected speed may vary over the life of the target, with increased speeds becoming desirable as the target thins.Type: ApplicationFiled: October 12, 2005Publication date: April 20, 2006Inventors: Mark Ford, Rajkumar Jakkaraju
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Publication number: 20050269900Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.Type: ApplicationFiled: August 4, 2005Publication date: December 8, 2005Inventors: Christine Shearer, Carl Brancher, Rajkumar Jakkaraju
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Patent number: 6944922Abstract: A of forming an acoustic resonator of one inventive aspect includes depositing at least one primer layer, depositing an electrode layer containing Molybdenum on the upper surface of the primer layer, and depositing a layer may piezoelectric material on the uppermost electrode layer. The primer layer may included a generally crystalline material, the upper surface of which has an atomic spacing that matches the atomic spacing of the electrode layer to within about 15% and is not of cubic crystalline form.Type: GrantFiled: August 11, 2003Date of Patent: September 20, 2005Assignee: Trikon Technologies LimitedInventors: Christine Janet Shearer, Carl David Brancher, Rajkumar Jakkaraju
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Publication number: 20050099099Abstract: An acoustic resonator of one inventive aspect includes a substrate, at least one generally crystalline primer layer provided on the substrate either directly or on top of one or more intermediate layers, a generally smooth and generally crystalline electrode layer provided on the primer layer, and a piezoelectric layer provided on the electrode layer. The primer layer, or at least one of the primer layers, has a crystallographic structure belonging to a first crystal system, and the electrode layer has a crystallographic structure belonging to a second crystal system which is different to the first system. The atomic spacing of the primer layer or at least one of said primer layers and that of the electrode matches to within about 15%.Type: ApplicationFiled: November 29, 2004Publication date: May 12, 2005Inventors: Christine Shearer, Carl Brancher, Rajkumar Jakkaraju