Patents by Inventor Raju Ahmed
Raju Ahmed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978527Abstract: Some embodiments include an integrated assembly having an interconnect over a first conductive structure and coupled with the first conductive structure. The interconnect includes a conductive core. The conductive core has a slender upper region and a wide lower region. The upper region joins to the lower region at a step. A liner laterally surrounds the lower region of the conductive core. The liner has an upper surface which is substantially coplanar with the step. An insulative collar is over and directly against both an upper surface of the step and the upper surface of the liner. The insulative collar laterally surrounds and directly contacts the slender upper region. A second conductive structure is over and directly against a region of the insulative collar, and is over and directly against an upper surface of the slender upper region. Some embodiments include methods of forming integrated assemblies.Type: GrantFiled: March 11, 2022Date of Patent: May 7, 2024Assignee: Micron Technology, Inc.Inventors: Raju Ahmed, David A. Kewley, Dave Pratt, Yung-Ta Sung, Frank Speetjens, Gurpreet Lugani
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Publication number: 20230113573Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.Type: ApplicationFiled: October 21, 2022Publication date: April 13, 2023Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti
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Publication number: 20230058288Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.Type: ApplicationFiled: November 2, 2022Publication date: February 23, 2023Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson
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Publication number: 20230021072Abstract: Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense/access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense/access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.Type: ApplicationFiled: September 16, 2022Publication date: January 19, 2023Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, Radhakrishna Kotti, David A. Kewley, Dave Pratt
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Patent number: 11545391Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.Type: GrantFiled: February 11, 2020Date of Patent: January 3, 2023Assignee: Micron Technology, Inc.Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson
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Patent number: 11515204Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.Type: GrantFiled: December 29, 2020Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti
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Patent number: 11482492Abstract: Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense/access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense/access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.Type: GrantFiled: July 10, 2020Date of Patent: October 25, 2022Assignee: Micron Technology, Inc.Inventors: Raju Ahmed, Radhakrishna Kotti, David A. Kewley, Dave Pratt
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Publication number: 20220246444Abstract: A method for incorporating semiconductors on a diamond substrate. A buffer layer (e.g., GaN) is grown on a transition layer (e.g., AlN/AlGaN) residing on a substrate. A silicon nitride layer is then grown on the buffer layer. After selectively seeding diamond on the silicon nitride layer, the selective seeding of the diamond is dry etched to form regions with seeded diamond and regions without seeded diamond. The silicon nitride is selectively etched in the regions without seeded diamond and diamond is grown in the regions with seeded diamond forming regions of diamond. Additional Group III-nitride semiconductor material (e.g., GaN) is grown in the etched regions without seeded diamond to fill such regions to reach a level of the regions with diamond. An epitaxial overgrowth of the Group III semiconductor material at and above the level of the regions with diamond is then performed.Type: ApplicationFiled: May 31, 2019Publication date: August 4, 2022Inventors: Raju Ahmed, Edwin L. Piner
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Publication number: 20220208606Abstract: Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an electrically insulative material at least partially over a first electrically conductive feature and a second electrically conductive feature. The method can further include forming a ring of electrically conductive material around a sidewall of the insulative material defining the opening, wherein the ring of electrically conductive material includes (a) a first via portion over the first electrically conductive feature, (b) a second via portion over the second electrically conductive feature, and (c) connecting portions extending between the first and second via portions. Finally, the method can include removing the connecting portions of the ring of electrically conductive material to electrically isolate the first via portion from the second via portion.Type: ApplicationFiled: December 29, 2020Publication date: June 30, 2022Inventors: Trupti D. Gawai, David S. Pratt, Ahmed M. Elsied, David A. Kewley, Dale W. Collins, Raju Ahmed, Chelsea M. Jordan, Radhakrishna Kotti
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Publication number: 20220199123Abstract: Some embodiments include an integrated assembly having an interconnect over a first conductive structure and coupled with the first conductive structure. The interconnect includes a conductive core. The conductive core has a slender upper region and a wide lower region. The upper region joins to the lower region at a step. A liner laterally surrounds the lower region of the conductive core. The liner has an upper surface which is substantially coplanar with the step. An insulative collar is over and directly against both an upper surface of the step and the upper surface of the liner. The insulative collar laterally surrounds and directly contacts the slender upper region. A second conductive structure is over and directly against a region of the insulative collar, and is over and directly against an upper surface of the slender upper region. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: March 11, 2022Publication date: June 23, 2022Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, David A. Kewley, Dave Pratt, Yung-Ta Sung, Frank Speetjens, Gurpreet Lugani
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Patent number: 11328749Abstract: Some embodiments include an integrated assembly having an interconnect over a first conductive structure and coupled with the first conductive structure. The interconnect includes a conductive core. The conductive core has a slender upper region and a wide lower region. The upper region joins to the lower region at a step. A liner laterally surrounds the lower region of the conductive core. The liner has an upper surface which is substantially coplanar with the step. An insulative collar is over and directly against both an upper surface of the step and the upper surface of the liner. The insulative collar laterally surrounds and directly contacts the slender upper region. A second conductive structure is over and directly against a region of the insulative collar, and is over and directly against an upper surface of the slender upper region. Some embodiments include methods of forming integrated assemblies.Type: GrantFiled: December 18, 2019Date of Patent: May 10, 2022Assignee: Micron Technology, Inc.Inventors: Raju Ahmed, David A. Kewley, Dave Pratt, Yung-Ta Sung, Frank Speetjens, Gurpreet Lugani
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Publication number: 20220013449Abstract: Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense/access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense/access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.Type: ApplicationFiled: July 10, 2020Publication date: January 13, 2022Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, Radhakrishna Kotti, David A. Kewley, Dave Pratt
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Publication number: 20210249304Abstract: Some embodiments include a method of forming an integrated assembly. An arrangement is formed to include a conductive pillar extending through an insulative mass. An upper surface of the conductive pillar is recessed to form a cavity. An insulative collar is formed within the cavity to line an outer lateral periphery of the cavity. A recessed surface of the conductive pillar is exposed at a bottom of the lined cavity. A conductive expanse is formed over the insulative mass. A portion of the conductive expanse extends into the cavity and is configured as an interconnect. The conductive expanse is patterned into multiple conductive structures. One of the conductive structures includes the interconnect.Type: ApplicationFiled: February 11, 2020Publication date: August 12, 2021Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, Frank Speetjens, Darin S. Miller, Siva Naga Sandeep Chalamalasetty, Dave Pratt, Yi Hu, Yung-Ta Sung, Aaron K. Belsher, Allen R. Gibson
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Publication number: 20210193189Abstract: Some embodiments include an integrated assembly having an interconnect over a first conductive structure and coupled with the first conductive structure. The interconnect includes a conductive core. The conductive core has a slender upper region and a wide lower region. The upper region joins to the lower region at a step. A liner laterally surrounds the lower region of the conductive core. The liner has an upper surface which is substantially coplanar with the step. An insulative collar is over and directly against both an upper surface of the step and the upper surface of the liner. The insulative collar laterally surrounds and directly contacts the slender upper region. A second conductive structure is over and directly against a region of the insulative collar, and is over and directly against an upper surface of the slender upper region. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: December 18, 2019Publication date: June 24, 2021Applicant: Micron Technology, Inc.Inventors: Raju Ahmed, David A. Kewley, Dave Pratt, Yung-Ta Sung, Frank Speetjens, Gurpreet Lugani