Patents by Inventor Rakesh Balraj Sethi

Rakesh Balraj Sethi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High speed flash memory cell structure and method
    Patent number: 5760438
    Abstract: A fast, fieldless flash memory cell includes an erase node having a control gate and a floating gate, both formed of polycrystalline silicon, a program transistor sharing the floating gate and control gate with the erase node, and a read transistor sharing the floating gate and control gate with the erase node and program transistor. The inventive memory cell is suitable for use in fast Programmable Logic Devices (PLDs) in the sub 5 nS range (2-5 nS), and other logic and memory parts.
    Type: Grant
    Filed: February 4, 1997
    Date of Patent: June 2, 1998
    Assignee: Cypress Semiconductor Corporation
    Inventors: Rakesh Balraj Sethi, Christopher S. Norris, Genda J. Hu
  • High speed flash memory cell structure and method
    Patent number: 5648669
    Abstract: A fast, fieldless flash memory cell includes an erase node having a control gate and a floating gate, both formed of polycrystalline silicon, a program transistor sharing the floating gate and control gate with the erase node, and a read transistor sharing the floating gate and control gate with the erase node and program transistor. The inventive memory cell is suitable for use in fast Programmable Logic Devices (PLDs) in the sub 5 nS range (2-5 nS), and other logic and memory parts.
    Type: Grant
    Filed: May 26, 1995
    Date of Patent: July 15, 1997
    Assignee: Cypress Semiconductor
    Inventors: Rakesh Balraj Sethi, Christopher S. Norris, Genda J. Hu