Abstract: An IC includes first-third power rails over a semiconductor substrate. The first rail has a first polarity different from the second and third rails. The IC includes multiple first cells on the semiconductor substrate in first and second rows. The first row is separated from the second row by the first power rail. Each first cell includes a first height and a first structure having at least one transistor. For each first cell in the first row, the first structure is entirely between the first and second rails. Further, for each first cell in the second row, the first structure is between the first and third rails. The IC includes an extension cell arranged on the semiconductor substrate in the first row. The extension cell includes a second structure having at least one transistor. A portion of the second structure extends into the second row.

Abstract: Provided is an apparatus that includes an integrated circuit including a static complementary metal-oxide-semiconductor based full adder (FA) circuit. The FA circuit comprises a sum generation circuit configured to generate a sum output and a carry output generation circuit configured to generate a carry output. The sum generation circuit comprises a first exclusive-NOR gate and a second exclusive-NOR gate. The carry output generation circuit comprises a first or-and-invert (OAI) gate, a second OAI gate, and a NAND gate. The first OAI gate is configured to receive an output of the NAND gate to generate one of an exclusive-NOR output or a NOR output of a first operand and a second operand. The second OAI gate is configured to receive the output of the NAND gate, an inverse of a carry input, and the generated one of the exclusive-NOR output or the NOR output to produce the carry output.

Abstract: A device comprising a semiconductor substrate. The device also comprising a digital block defined on the substrate and having multiple electronic elements. The device also comprises first and second poly layers coupling to the multiple electronic elements, the first and second poly layers extending in parallel through the digital block in a first direction. The device further comprising a third poly layer coupled to the first poly layer and extending through a gap in the second poly layer in a second direction orthogonal to the first direction poly.

Abstract: Provided is an apparatus that includes an integrated circuit including a static complementary metal-oxide-semiconductor based full adder circuit. The integrated circuit includes a carry generation circuit configured to receive a first input and a second input to generate a carry, and a carry propagation circuit configured to receive the first input, the second input, and a third input to generate a propagated output. The integrated circuit further includes a carry output generation circuit configured to receive the generated carry and the propagated output to generate a final carry as an output, and a sum generation circuit configured to generate a sum output. The sum generation circuit includes the carry generation circuit and is configured to receive the first input, the second input, and generated carry to generate an exclusive NOR output, and further uses the generated exclusive NOR output and the third input to generate the sum output.

Abstract: An IC includes first-third power rails. The first-third power rails are located along corresponding first-third centerlines spaced apart by the same distance. A plurality of first logic cells is in first and second width that is an integer multiple of a unit width and a first semiconductor structure that includes multiple transistors. For each first logic cell in the first row, the first semiconductor structure is located entirely between the first and second centerlines. For each first logic cell in the second row, the first semiconductor structure is located entirely between the first and third centerlines. A multi-height logic cell includes a second height that is greater than the first height, and a second width that is at least the unit width. The second semiconductor structure includes at least two transistors. The second semiconductor structure is partially between the first and second centerlines and between the first and third centerlines.

Abstract: An IC includes first-third power rails over a semiconductor substrate. The first rail has a first polarity different from the second and third rails. The IC includes multiple first cells on the semiconductor substrate in first and second rows. The first row is separated from the second row by the first power rail. Each first cell includes a first height and a first structure having at least one transistor. For each first cell in the first row, the first structure is entirely between the first and second rails. Further, for each first cell in the second row, the first structure is between the first and third rails. The IC includes an extension cell arranged on the semiconductor substrate in the first row. The extension cell includes a second structure having at least one transistor. A portion of the second structure extends into the second row.

Abstract: An integrated circuit, and method of forming the same. The integrated circuit includes standard logic cells and a combined logic cell over a semiconductor substrate. Each standard logic cell includes a standard height, a width that is an integer multiple of a unit width, first and second power rails, and at least one transistor and interconnections configured to implement a logic function that produces a single logic output. The combined logic cell includes the standard height, a width that is an integer multiple of the unit width, the first and second power rails, and at least two transistors and interconnections configured to implement a first logic function and a second logic function. The first and second logic functions produce first and second logic outputs, respectively. The interconnections are configured to direct the first logic output and the second logic output to destinations outside the combined logic cell.

Abstract: An integrated circuit, and method of forming the same. The integrated circuit includes standard logic cells and a combined logic cell over a semiconductor substrate. Each standard logic cell includes a standard height, a width that is an integer multiple of a unit width, first and second power rails, and at least one transistor and interconnections configured to implement a logic function that produces a single logic output. The combined logic cell includes the standard height, a width that is an integer multiple of the unit width, the first and second power rails, and at least two transistors and interconnections configured to implement a first logic function and a second logic function. The first and second logic functions produce first and second logic outputs, respectively. The interconnections are configured to direct the first logic output and the second logic output to destinations outside the combined logic cell.

Abstract: A device comprising a semiconductor substrate. The device also comprising a digital block defined on the substrate and having multiple electronic elements. The device also comprises first and second poly layers coupling to the multiple electronic elements, the first and second poly layers extending in parallel through the digital block in a first direction. The device further comprising a third poly layer coupled to the first poly layer and extending through a gap in the second poly layer in a second direction orthogonal to the first direction poly.

Abstract: An apparatus comprising a first digital block, a second digital block, and a continuous power rail. The continuous power rail comprising a first portion, extending through the first digital block that is aligned along a first axis and the continuous power rail further comprising a second portion, extending through the second digital block that is aligned along a second axis, wherein the first and the second axes are parallel to each other.