Abstract: An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one TS-short-related failure mode, and one AA-short-related failure mode.

Abstract: An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one AACNT-short-related failure mode, one TS-short-related failure mode, and one metal-short-related failure mode.

Abstract: An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one GATE-short-related failure mode, one GATECNT-short-related failure mode, and one TS-short-related failure mode.

Abstract: An IC includes logic cells, selected from a standard cell library, and fill cells, configured for compatibility with the standard logic cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The IC includes such NCEM-enabled fill cells configured to enable detection and/or measurement of a variety of open-circuit and short-circuit failure modes, including at least one via-open-related failure mode, one GATE-short-related failure mode, one GATECNT-short-related failure mode, and one AA-short-related failure mode.

Abstract: An integrated circuit is designed to improve yield when manufacturing the integrated circuit, by obtaining a design element from a set of design elements used in designing integrated circuits. A variant design element is created based on the obtained design element, where a feature of the obtained design element is modified to create the variant design element. A yield to area ratio for the variant design element is determined. If the yield to area ratio of the variant design element is greater than a yield to area ratio of the obtained design element, the variant design element is retained to be used in designing the integrated circuit.

Abstract: A hot spot is identified within a mask layout design. The hot spot represents a local region of the mask layout design having one or more feature geometries susceptible to producing one or more fabrication deficiencies. A test structure is generated for the identified hot spot. The test structure is defined to emulate the one or more feature geometries susceptible to producing the one or more fabrication deficiencies. The test structure is fabricated on a test wafer using specified fabrication processes. The as-fabricated test structure is examined to identify one or more adjustments to either the feature geometries of the hot spot of the mask layout design or the specified fabrication processes, wherein the identified adjustments are capable of reducing the fabrication deficiencies.

Abstract: An integrated circuit is designed to improve yield when manufacturing the integrated circuit, by obtaining a design element from a set of design elements used in designing integrated circuits. A variant design element is created based on the obtained design element, where a feature of the obtained design element is modified to create the variant design element. A yield to area ratio for the variant design element is determined.