Abstract: Various implementations described herein refer to a device having a cell structure with multiple transistors including active n-type transistors and active p-type transistors disposed together within a cell boundary. The active n-type transistors may have a first diffusion region formed within the cell boundary at a first end of the cell structure. The active p-type transistors may have a second diffusion region formed within the cell boundary at a second end of the cell structure. The active p-type transistors may have a vacated region cut-out from the second diffusion region, and/or the active n-type transistors may have a vacated region cut-out from the first diffusion region.