Abstract: Apparatuses and methods are provided for applying accelerated electrons to a gaseous medium by means of an electron beam generator, which has at least one cathode for emitting electrons and at least one electron exit window, wherein a) the at least one cathode is annular and the at least one electron exit window is in the form of an annular first hollow cylinder, the annular electron exit window in the form of the first hollow cylinder forms an inner wall of an annular housing of the electron beam generator, wherein the electrons emitted by the cathode are accelerated to the ring axis of the annular housing; b) an annular second hollow cylinder is arranged within the electron exit window in the form of the first hollow cylinder and delimits an annular space between the first hollow cylinder and the second hollow cylinder; c) a cooling gas is fed through the annular space between the first hollow cylinder and the second hollow cylinder; and d) the gaseous medium to which accelerated electrons are to be applied

Abstract: An apparatus is provided for generating accelerated electrons, including a housing; an inlet for supplying a working gas; at least one first cathode; and at least one first anode, between which a corona discharge plasma can be generated. Ions from the corona discharge plasma can be accelerated onto the surface of a second cathode. Electrons emitted by the second cathode can be accelerated in the direction of the electron exit window by means of a second electric voltage applied between the second cathode and a second anode. The housing, the second cathode, and the electron exit window are ring-shaped. The ring-shaped space is divided into ring segments. Each ring segment has at least one wire-shaped electrode, which extends through the ring segment. At least one separate power supply device is associated with each ring segment, by means of which the strength of the electrical current is adjustable.

Abstract: An apparatus is provided for generating accelerated electrons, including a housing; an inlet for supplying a working gas; at least one first cathode; and at least one first anode, between which a corona discharge plasma can be generated. Ions from the corona discharge plasma can be accelerated onto the surface of a second cathode. Electrons emitted by the second cathode can be accelerated in the direction of the electron exit window by means of a second electric voltage applied between the second cathode and a second anode. The housing, the second cathode, and the electron exit window are ring-shaped. The ring-shaped space is divided into ring segments. Each ring segment has at least one wire-shaped electrode, which extends through the ring segment. At least one separate power supply device is associated with each ring segment, by means of which the strength of the electrical current is adjustable.

Abstract: Production of a thin-film system containing at least one ultra-thin film, preferentially in the film thickness range from 1 to 10 nm, which is deposited by plasma-aided chemical or physical vapor-phase deposition using magnetron discharges. The method is characterized in that in the course of deposition of the ultra-thin film the power output is introduced into the plasma in the form of a controlled number of power pulses and that the average power output during the pulse-on time is set higher by a factor of at least 3 than the averaged power output over the entire coating time during deposition of the ultra-thin film.

Abstract: A method of coating of thin film coated magnetic disks and thin film magnetic disks made thereby is described. In accordance with the invention, a barrier layer is deposited on the substrate before the underlayer film(s) to increase the corrosion resistance of metallic substrate magnetic disks and, in the case of nonmetallic substrates, to reduce the diffusion of water to the substrate and of freely moveable ions from the substrate. Preferably the barrier layer is deposited by medium frequency pulsed sputtering at a frequency of 10 to 200 kHz and a pulse length to pulse pause ratio from 5:1 to 1:10. Aluminum or chromium are the preferred materials for the barrier layer. Additional improvements may be achieved where the sputtering process gas contains a proportion of oxygen and/or nitrogen.