Abstract: An acceleration limit switch includes an elastic conductive diaphragm, a printed circuit board, a permanent magnet, an alarm and a ball-shaped inertia body retained in an idle position by the permanent magnet and opposed by the elastic conductive diaphragm and the printed circuit board. The ball-shaped inertia body is placed in motion, when excited, by a sharp direction-specific change in acceleration so that the inertia body is moved from the idle position to impact the elastic conductive diaphragm for establishing a contact between conducting paths when the inertia body is received in a structure defining a hollow space so shaped for yielding a direction-selective triggering of the acceleration limit value switch for triggering the alarm.

Abstract: Method for producing a doped polycide layer on a semiconductor substrate. A polycide layer (14) is formed by producing a metal silicide layer (13a) on a polysilicon layer (12a). After the formation thereof, the polycide layer (14) is doped to an ulltimate value of the dopant concentration by an implantation. The polysilicon layer can be pre-doped. The method is particularly suited for the manufacture of p.sup.+ -doped polycide gates in a salicide process.