Abstract: A method for fabricating a SiC power semiconductor device includes: providing a SiC power semiconductor die; depositing a metallization layer over the power semiconductor die, the metallization layer including a first metal; arranging the power semiconductor die over a die carrier such that the metallization layer faces the die carrier, the die carrier being at least partially covered by a plating that includes Ni; and diffusion soldering the power semiconductor die to the die carrier such that a first intermetallic compound is formed between the power semiconductor die and the plating, the first intermetallic compound including Ni3Sn4.

Abstract: A powder application device (10) for use in a system (100) for producing a three-dimensional workpiece using a generative layering process comprises a spreading member (12). The spreading member (12) is movable across a surface of a carrier (116) for depositing a raw material powder for producing a workpiece by a generative layering method onto the surface of the carrier (116). Furthermore, the powder application device (10) comprises a powder entrainer (16) which is movable across a carrier plane (E) and which, in the region of a surface (20) facing the carrier plane (E), is provided with a surface profile (22). The surface profile (20) comprises an entraining element (24a, 24b, 24c) and a passage channel (26a, 26b, 26c).

Abstract: A control system for the axes of movement of handling machines with linear drives and/or pivoting drives for transporting and for positioning workpieces relative to and in a target point, particularly relative to and on processing machines. The control system combines a speed adjustment or speed control of the axes of movement of the handling machine for moving a workpiece into the area of a target point, on the one hand, and a position control of the axes of movement for the precise positioning of the workpiece in the target point, on the other hand.