Abstract: An apparatus for detecting a rotation angle of a rotation around an axis of rotation includes a transducer magnet for generating a magnetic field as well as a plurality of magnetic-field-sensitive sensor elements for detecting the magnetic field. The magnet and the plurality of magnetic-field-sensitive sensor elements are arranged such that, during a rotation around the axis of rotation, the plurality of magnetic-field-sensitive sensor elements circles relative to the transducer magnet around the same. By the plurality of magnetic-field-sensitive sensor elements, a scale is defined, with the transducer magnet being arranged such that the generated magnetic-field comprises a characteristic on a locus on the scale, and the locus on the scale being dependent on a partial area of a full rotation in an unique manner from the rotation angle. The transducer magnet is magnetized inclined to the axis of rotation.

Abstract: A structure for the phase modulation of light (32) incident upon said structure comprises a mirror (40), a deformable and transparent dielectric (36) disposed on the mirror (40), at least two electrodes (41; 42; 41a, 41b, 42; 50, 50′) having one or several fixed potentials and being adapted to have one or more control voltages applied thereto for generating an electric field (58) in at least a partial region of said dielectric (36), thereby changing the optical path length of the light passing through said dielectric (36) with respect to a state of the dielectric (36) in which the electric field is not applied thereto. An arrangement of a plurality of such phase-modulating structures applied on a CMOS active matrix constitutes a very large scale integrated spatial light modulator.

Abstract: A miniturized coil arrangement made by planar technology for the detection f material having a magnetic permeability other than zero, provided with a magnetizable core in a first plane of a substrate, an electrically energizable coil wound around a first section of a core to generate flux therein and at least one other coil in a second plane of the substrate adjacent another section of the coil responsive to disturbance in the flux.

Abstract: The invention relates to an infrared radiation absorption device, which can be unrestrictedly produced from CMOS technology methods and materials. The absorber structure according to the invention comprises a lower layer (1) with a low transmission coefficient, a central layer (2) with a high absorption coefficient and an upper, absorbing component (3) with a low reflection coefficient for the radiation to be absorbed and which is applied from above. The upper component can e.g. comprise depressions in the central layer, whose walls are coated with metal. The absorber structure is used in the inexpensive manufacture of integrated, thermal infrared detectors.