Abstract: A first SOI field effect transistor with predetermined transistor properties, comprising: a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate; a spacer layer having a predetermined thickness on at least a portion of the sidewalls of the laterally delimited layer sequence; and two source/drain regions in two surface regions of the substrate which are adjoined by the spacer layer, with a predetermined dopant concentration profile, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions during the production of the first SOI field effect transistor, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by the dopant concentration profile.

Abstract: Method for producing a first SOI field effect transistor with predetermined transistor properties by forming a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate, forming a spacer layer having a predetermined thickness, on at least a portion of the sidewalls of the laterally delimited layer sequence, and forming two source/drain regions having a predetermined dopant concentration profile, by introducing dopant into two surface regions of the substrate which are adjoined by the spacer layer, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by setting the dopant concentration profile.

Abstract: Booster circuit (2), to which a first (3) and a second (4) signal are fed, wherein the booster circuit (2) is designed in such a way that it amplifies a voltage difference between the first (3) and the second (4) signal. Therefore, two output signals which are inverted with respect to one another, of a circuit section connected to the booster circuit (2) are amplified without loss of running time, a smaller additional area being required in comparison to conventional circuit variants.

Abstract: Method for producing a first SOI field effect transistor with predetermined transistor properties by forming a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate, forming a spacer layer having a predetermined thickness, on at least a portion of the sidewalls of the laterally delimited layer sequence, and forming two source/drain regions having a predetermined dopant concentration profile, by introducing dopant into two surface regions of the substrate which are adjoined by the spacer layer, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by setting the dopant concentration profile.