Patents by Inventor Ralf Huelsewede

Ralf Huelsewede has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11552453
    Abstract: A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: January 10, 2023
    Assignee: Jenoptik Laser GmbH
    Inventors: Ralf Huelsewede, Matthias Schroeder, Valentin Loyo Maldonado
  • Publication number: 20180138664
    Abstract: A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.
    Type: Application
    Filed: February 24, 2016
    Publication date: May 17, 2018
    Applicant: JENOPTIK Laser GmbH
    Inventors: Ralf HUELSEWEDE, Matthias SCHROEDER, Valentin LOYO MALDONADO
  • Patent number: 8101446
    Abstract: There is provided a method for the production of diode laser bars from a wafer, wherein a metal layer is applied to the wafer in such a way that it does not extend up to the later facets of the diode laser bars to be separated, the diode laser bars are separated and stacked one atop another, the metal layer producing a gap between the facets of the stacked diode laser bars and the metal layer being selected in such a way that clogging of the gap during coating of a facet is prevented.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: January 24, 2012
    Assignee: JENOPTIK Diode Lab GmbH
    Inventors: Juergen Sebastian, Ralf Huelsewede
  • Publication number: 20100067556
    Abstract: There is provided a method for the production of diode laser bars from a wafer, wherein a metal layer is applied to the wafer in such a way that it does not extend up to the later facets of the diode laser bars to be separated, the diode laser bars are separated and stacked one atop another, the metal layer producing a gap between the facets of the stacked diode laser bars and the metal layer being selected in such a way that clogging of the gap during coating of a facet is prevented.
    Type: Application
    Filed: March 7, 2008
    Publication date: March 18, 2010
    Applicant: JENOPTIK DIODE LAB GMBH
    Inventors: Juergen Sebastian, Ralf Huelsewede