Abstract: To enable detection of blood clots in an extracorporeal blood circulation, a device for detecting blood clots in an extracorporeal blood circulation is proposed, the device optionally comprising an actuator which can create an adjustable constriction on the extracorporeal blood circulation in that it reduces the cross section of a section of a blood line, at least one sensor, which requires at least one parameter related to a property of the liquid in the extracorporeal blood circulation, and a control unit, which is configured such that a measurement signal from the at least one sensor is evaluated, and, that on the basis of this evaluation of the parameter measured by the sensor, the passage of a blood clot through the constriction and/or the sticking of a blood clot in the constriction can be detected.

Abstract: The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Abstract: An image processing device has circuitry, which is configured to obtain input image data being represented by a number of color channels and to input the input image data into a neural network for generating output multispectral image data, wherein the neural network is configured to generate at least first and second multispectral image data on the basis of the input image data, wherein a number of spectral channels of the second multispectral image data is larger than the number of spectral channels of the first multispectral image data.

Abstract: A vibratory grinding device has a work container and a grinding body removal device by which grinding bodies can be led out of the work container.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm?3 from the mean concentration of this dopant in the peripheral region (104).

Abstract: Two workpieces 30, 40 are joined by means of ultrasound. First, a workpiece 30 with at least one energy direction sensor 31 and a second workpiece 40 are provided. The workpieces are brought into contact with each other in such a way that the energy direction sensor 31 comes into contact with a first surface 41 of the second workpiece 40. Ultrasonic vibrations are then introduced into one of the workpieces 40 via a working surface 11 of a sonotrode 10. A sonotrode 10 is used, which has a contour with contact lines 12 on the working surface 11. The sonotrode 10 is positioned with respect to the first workpiece 30 in such a way that the contact lines 12 run transversely to the energy direction generator 31.

Abstract: The present disclosure relates to a layered seed for growing a volume mono crystal by gas phase growth in a direction of growth (Y) in a crucible. The layered seed comprises a monocrystalline growing layer with a growing surface for growing the volume mono crystal and an opposing heat spreader facing surface for coupling the growing layer to a heat spreader layer. The layered seed further comprises the heat spreader layer with a growing layer facing surface for coupling to the heat spreader facing surface and an opposing mounting surface for mounting the heat spreader layer to the crucible, wherein the heat spreader layer comprises a polycrystalline material having thermally coupled grains that are piled in the direction of growth (Y), the piled grains for equalizing hot spots of the crucible thermally coupled to the mounting surface.

Abstract: The present invention provides a multilayer seed which is designed such as to offer a virtually unstressed surface onto which a single-crystal can grow without the negative impact of the internal stress carried by monocrystalline seeds, in particular at the high temperatures conventionally used in sublimation processes. The multilayer seed for growing a single-crystal comprise at least two seed layers, wherein each of the at least two seed layers is a monocrystalline layer characterized by one or more parameters associated with a respective degree of internal stress. The one or more parameters are selected such that the at least two seed layers are adapted to counter-act the respective internal stresses from each other.

Abstract: The present disclosure relates to a layered substrate for growing an epitaxial layer in a direction of growth (Y) in a reactor. The layered substrate comprises a monocrystalline growing layer with a growing surface for growing the epitaxial layer and an opposing heat spreader facing surface for coupling the growing layer to a heat spreader substrate. The layered substrate further comprises the heat spreader substrate with a growing layer facing surface for coupling to the heat spreader facing surface and an opposing mounting surface for mounting the heat spreader substrate to the reactor, wherein the heat spreader substrate comprises a polycrystalline material having thermally coupled grains that are piled in the direction of growth (Y), the piled grains for equalizing hot spots of the reactor thermally coupled to the mounting surface.

Abstract: A bulk SiC single crystal is produced by sublimation growth. A stress measurement to detect initial internal mechanical seed stresses is carried out on a wafer-shaped single crystalline SiC seed crystal. The seed crystal is classified, according to the stress measurement, into a first class when the initial seed stresses are below a first stress boundary value, into a second class when the initial seed stresses lie between the first stress boundary value and a second stress boundary value, and into a third class when the initial seed stresses exceed the second stress boundary value. The actual sublimation growth for growing the bulk SiC single crystal is carried out with the SiC seed crystal only when it has been classified into the first or second class, and when it is classified into the second class, at least one stress-reducing measure is carried out.

Abstract: A seed unit for growing a bulk SiC single crystal has a wafer-like single crystalline SiC seed crystal with a growth surface arranged on a wafer front side for growing the bulk SiC single crystal to be grown. The SiC seed crystal has a crystal longitudinal mid-axis extending in an axial direction. A radial direction is oriented perpendicular to the axial direction. The seed unit also has a rear side layer component arranged on a wafer rear side of the SiC seed crystal, the structure of which changes starting from the crystal longitudinal mid-axis in the radial direction, and so a radial temperature gradient is adjusted during the growth of the bulk SiC single crystal within the SiC seed crystal.

Abstract: The present invention relates to a crucible with a cavity for growing a SiC volume mono crystal by sublimation growth in a direction of growth (Y). The crucible comprises an end wall (110) with a seed holder (112) for holding a SiC seed crystal in the cavity, the end wall (110) extending in a direction (r) perpendicular to the direction of growth (Y); a side wall (140) extending in the direction of growth (Y), the side wall (140) preventing permeation of a doping gas from an external into the cavity, the doping gas for doping the SiC volume mono crystal during the sublimation growth; and a diffusion region (114) allowing permeation of the doping gas from the external in the cavity, wherein the diffusion region (114) is located between the seed holder (112) and an edge (142) of the side wall (140).

Abstract: An arrangement for growing a SiC volume monocrystal in a cavity (110) by sublimation growth in the direction of growth (Y) includes a susceptor (100) for absorbing electromagnetic energy and heating the cavity (110). An insulator (200) surrounds the susceptor (100) to thermally insulate it from the exterior. The insulator (200) features a thermal insulation wall (202) that reduces radial heat transfer (r) from the susceptor (100). A thermally conductive layer (210) is positioned between the susceptor (100) and the thermal insulation wall (202) to distribute heat and minimize or reduce thermal conduction to the insulator (200), enhancing the insulator's reflectivity and reducing waviness.

Abstract: A portion capsule which is filled with an extraction material, for production of a brewed product includes a plastic main body with a lid fastened thereto. The main body forms a base region, a circumferential side wall and a circumferential main body collar which connects to the circumferential side wall towards a lid side. The lid has a lid collar whose inner side is welded to the main body collar, so that the main body collar and the lid collar form a common collar of the capsule. The main body and the lid together form a capsule which encloses the extraction material. The capsule has a square horizontal section by way of the main body at least in the region of the collar having square horizontal section. The collar at the lid side includes a plurality of ribs which run at an angle to the side wall.

Abstract: The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.

Abstract: Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.

Abstract: An image processing device has circuitry, which is configured to obtain input image data being represented by a number of color channels and to input the input image data into a neural network for generating output multispectral image data, wherein the neural network is configured to generate at least first and second multispectral image data on the basis of the input image data, wherein a number of spectral channels of the second multispectral image data is larger than the number of spectral channels of the first multispectral image data.