Abstract: The present invention relates to a silicon carbide substrate for use as a crystal seed, comprising a monocrystalline silicon carbide disk covered with a protective oxide layer. The protective oxide layer is intended to be removed to expose an ideal, clean surface of the monocrystalline silicon carbide disk. The present invention also relates to a method of producing at least one bulk silicon carbide single-crystal by sublimation growth using the silicon carbide substrate with protective oxide layer as a seed crystal. The protective oxide layer is removed from the seed crystal surface to expose the underlying monocrystalline silicon carbide disk by a back-etching process performed in-situ in the crystal growth crucible, i.e. after the seed crystal is arranged inside the growth crucible and before the sublimation deposition on the growth surface starts.

Abstract: Thermal post-treatment of a silicon carbide (SiC) volume monocrystal which has a substantially cylindrical basic shape with a crystal length in an axial direction, a crystal diameter in a radial direction, a crystal central longitudinal axis extending in the axial direction, and with three boundary surfaces, namely, a bottom surface, a top surface and a circumferential edge surface. The SiC volume monocrystal is brought to a post-treatment temperature in order to reduce mechanical stresses present in the SiC volume monocrystal after completion of the previous growth, wherein an inhomogeneous temperature profile with a radial thermal gradient is set in the SiC volume monocrystal, which rises continuously from the crystal central longitudinal axis to the circumferential edge surface, and a heat exchange of the SiC volume monocrystal with a surrounding free space takes place via free heat radiation on at least two of the three boundary surfaces.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (102) having a longitudinal axis (120) and a sidewall (116) extending along the longitudinal axis (120), wherein the crucible comprises a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108), and a heating system being formed to generate a temperature field around a circumference of the crucible along the longitudinal axis of the crucible, wherein the crucible (102) comprises at least one first heat radiation cavity (118), which is arranged opposite to the fixing means and adjacent to the source material compartment (104), the first heat radiation cavity (118) being closed on all of its sides.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. The sublimation system comprises a crucible (202) having a longitudinal axis (212) and a sidewall (218) extending along the longitudinal axis (212), wherein the crucible (202) comprises a fixing means for at least one seed crystal (210) and at least one source material compartment (204) for containing a source material (208); and a heating system for generating a temperature field around a circumference of the crucible (202) along the longitudinal axis (212) of the crucible (202); a thermally insulating unit (214) arranged within the source material compartment (204) at the sidewall (218) of the crucible (202).

Abstract: An image processing device has circuitry, which is configured to obtain input image data being represented by a number of color channels and to input the input image data into a neural network for generating output multispectral image data, wherein the neural network is configured to generate at least first and second multispectral image data on the basis of the input image data, wherein a number of spectral channels of the second multispectral image data is larger than the number of spectral channels of the first multispectral image data.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible (102) and/or along the longitudinal axis of the crucible (102); a thermal insulation unit (117) at least partly surrounding the crucible (102), wherein the thermal insulation unit (117) has a radially and/or axially asymmetric form to compensate the irregular temperature field.

Abstract: The present invention relates to systems and methods for growing bulk semiconductor single crystals, and more specifically, for growing a bulk semiconductor single crystals, such as silicon carbide, based on physical vapor transport. A sublimation system for growing at least one single crystal of a semiconductor material by means of a sublimation growing process comprises a crucible (102) having a longitudinal axis (120) and comprising a fixing means for at least one seed crystal (110) and at least one source material compartment (104) for containing a source material (108); a heating system being formed to generate an irregular temperature field around a circumference of the crucible at one or more defined heights along the longitudinal axis of the crucible; a rotary drive that is operable to cause a rotational movement of the fixing means around the longitudinal axis relative to the heating system.

Abstract: The disclosure relates to an exhaust gas treatment unit comprising a housing wall comprising at least one first exhaust gas passage opening and at least one heating element for heating an exhaust gas flow, the heating element being placed upstream or downstream of the exhaust gas passage opening, wherein a hood is provided which serves to be placed in front of the exhaust gas passage opening, the heating element being arranged inside the hood and placed in front of the exhaust gas passage opening.

Abstract: The present disclosure relates to a medical condensate trap for use in external blood treatment by means of a blood treatment apparatus. The condensate trap comprises an interior; a first connection for connecting the interior in fluid communication to a gas outlet of the blood treatment apparatus; a second connection for connecting the interior in fluid communication to a gas inlet of the blood treatment apparatus; and a third connection for connecting the interior to an air port of a blood treatment device. The blood treatment device may be, for example, a blood tubing set or a blood cassette.

Abstract: A method for producing a capsule, includes providing a base body made of a plastic and having a base region, a circumferential side wall, and a circumferential base body flange adjacent to the circumferential side wall; providing a cover made of a plastic; filling the base body with an extraction material; placing the cover on the base body so that a fastening portion of the cover contacts the base body flange, and fastening the cover flange to the base body flange by ultrasonic welding. When fastening the cover flange, an inner surface of the fastening section makes contact with a flange surface of the base body flange. A sonotrode having mechanical vibrations applied thereto is pressed against an outer surface of the fastening section or of the base body flange, and mechanical vibrations liquefy plastic material of the cover or of the base body flange.

Abstract: The invention relates to a wall flow filter for removing particulate matter from the exhaust of internal combustion engines, comprising a wall flow filter substrate having a length L, and different coatings Z and F, the wall flow filter substrate being provided with channels E and A which run parallel between a first end and a second end of the wall flow filter substrate, are separated by porous walls, and form surfaces OE and OA, respectively; channels E are closed at the second end, and channels A are closed at the first end; coating Z is disposed in the porous walls and/or on surfaces OA, but not on surfaces OE, and contains palladium and/or rhodium and a cerium/zirconium mixed oxide; coating F is disposed mainly on surfaces OE, but not on surfaces OA, and comprises a membrane and no precious metal. The wall flow filter is characterized in that the mass ratio of coating Z to coating F ranges from 0.1 to 25.

Abstract: An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.

Abstract: A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.

Abstract: A prime mover, such as a tractor, is disclosed. The prime mover includes a drivetrain, a driver assistance system, and a tire pressure control system. The tire pressure control system is equipped with pneumatic components for setting and adapting a tire pressure of at least one of the tires of the prime mover and an attachment to the prime mover. The drivetrain includes at least one drive motor, one gearbox, at least one power take-off, and at least one ancillary unit. The driver assistance system controls the tire pressure control system and includes a computing unit, a memory unit, and an input/output unit. In particular, the driver assistance system includes an automatic tire pressure controller that operates based on a characteristic curve and is configured for optimized control of the tire pressure control system depending on selectable control strategies and/or optimization target variables.

Abstract: A support element fastens an interior lining part to a structural part of a vehicle, wherein the interior lining part is fastenable to the structural part via the support element. The support element has at least one deformation region which is of meandering design in at least one plane and is deformable under the application of a force.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm?3, preferably 1·1018 cm?3, from the mean concentration of this dopant in the peripheral region (104).

Abstract: A system including circuitry configured to process image data of a meal to obtain information on the contents of the meal; generate, based on the obtained information, a query with guidance to change image capture settings: and guide a user to pick up at least a part of the meal.

Abstract: The present invention relates to a hemostasis band, comprising a band, preferably made from an elastic material, a pressure focusing element for focusing pressure generated by the band to hold a cannula in place at a cannulation point, wherein the band can be arranged in a loop and the size of the loop formed by the band is adjustable to at least one defined size by means of an external tool, such as a torque driver. Another aspect of the invention relates to a system of a hemostasis band and an external tool.

Abstract: The present disclosure relates to a medical treatment system with a reading device programmed for - preferably contactless - gathering of information which serves to identify a healthcare professional and programmed to provide the gathered information to an authorization device. Furthermore, the medical treatment system comprises an apparatus of a group of items consisting of one or more treatment apparatuses for treating a patient, one or more diagnostic apparatuses for examining the patient and one or more further clinic apparatuses, e.g., for the logistical running of the clinic or practice operation. Furthermore, the medical treatment system comprises an authorization device for allowing or prohibiting one or more activities with or on the apparatus from the group and/or one or more movements of the healthcare professional in the vicinity of the apparatus from the group depending on the information provided by the reading device.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm?3 from the mean concentration of this dopant in the peripheral region (104).