Abstract: The invention relates to a device and method for measuring the density of a plasma by determining an impulse response to a high-frequency signal coupled into a plasma. The density, electron temperature and/or collision frequency as a function of the impulse response can be determined. A probe having a probe head and a probe shaft can be introduced into the plasma, wherein the probe shaft is connected to a signal generator for electrically coupling a high-frequency signal into the probe head. The probe core is enclosed by the jacket and has at its surface mutually insulated electrode areas of opposite polarity. A balun is arranged at the transition between the probe head and an electrically unbalanced high-frequency signal feed to convert electrically unbalanced signals into balanced signals.

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: The invention relates to a device and method for measuring the density of a plasma by determining an impulse response to a high-frequency signal coupled into a plasma. The density, electron temperature and/or collision frequency as a function of the impulse response can be determined. A probe having a probe head and a probe shaft can be introduced into the plasma, wherein the probe shaft is connected to a signal generator for electrically coupling a high-frequency signal into the probe head. The probe core is enclosed by the jacket and has at its surface mutually insulated electrode areas of opposite polarity. A balun is arranged at the transition between the probe head and an electrically unbalanced high-frequency signal feed to convert electrically unbalanced signals into balanced signals.

Abstract: Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114

Abstract: A method of establishing a DC bias in front of at least one electrode in a plasma operating apparatus by applying an RF voltage with at least two harmonic frequency components with a controlled relative phase between the components, where at least one of the higher frequency components is established as an even multiple of the lower frequency component.

Abstract: Device for determining the density of a plasma, with of a probe (1) which can be immersed into the plasma, with a probe head (2) in form of a three-axis ellipsoid, and a handle (3) connected to the probe head (2), wherein the probe head (2) has a sheath (4) and a probe core (5, 5a) surrounded by the sheath (4), wherein the surface (8) of the probe core (5, 5a) has electrode areas (9, 10) of opposite polarity which are insulated from each other. The probe core consists of electrodes (6, 7), to which a signal is applied. The absorption of that signal is measured and evaluated as a function of the frequency. Based on a multipole expansion, a mathematical model is constructed with which the absorption spectrum of the probe can be unambiguously evaluated. For a particular design of the probe, the response can be restricted to a single resonance, from which the electron density of the plasma (to be inferred from the resonance frequency) can be found by an unambiguous evaluation algorithm.

Abstract: Device for determining the density of a plasma, with of a probe (1) which can be immersed into the plasma, with a probe head (2) in form of a three-axis ellipsoid, and a handle (3) connected to the probe head (2), wherein the probe head (2) has a sheath (4) and a probe core (5, 5a) surrounded by the sheath (4), wherein the surface (8) of the probe core (5, 5a) has electrode areas (9, 10) of opposite polarity which are insulated from each other. The probe core consists of electrodes (6, 7), to which a signal is applied. The absorption of that signal is measured and evaluated as a function of the frequency. Based on a multipole expansion, a mathematical model is constructed with which the absorption spectrum of the probe can be unambiguously evaluated. For a particular design of the probe, the response can be restricted to a single resonance, from which the electron density of the plasma (to be inferred from the resonance frequency) can be found by an unambiguous evaluation algorithm.

Abstract: The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried away from a sputter target (21), through the plasma (2) towards a substrate (3), using an electrical field. In the process chamber (1), between the plasma (2) and the substrate (3) a magnetic field component (6) is produced by that is situated parallel to a substrate surface (5). Through the magnetic field component (6), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.

Abstract: The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried away from a sputter target (21), through the plasma (2) towards a substrate (3), using an electrical field. In the process chamber (1), between the plasma (2) and the substrate (3) a magnetic field component (6) is produced that is situated parallel to a substrate surface (5). Through the magnetic field component (6), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.