Abstract: A method of processing a monocrystalline semiconductor work piece includes: applying pulses of laser light to a first main surface of the monocrystalline semiconductor work piece, the pulses of laser light penetrating the first main surface and forming modified regions in a separation zone within the monocrystalline semiconductor work piece, each modified region being delimited by a subcritical crack that surrounds an inner part in which the monocrystallinity of the semiconductor work piece is altered; controlling the pulses of laser light such that the subcritical cracks of adjacent ones of the modified regions are non-overlapping for at least half of the modified regions formed in the monocrystalline semiconductor work piece; and after inducing the subcritical cracks, forming at least one crack that connects the subcritical cracks. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

Abstract: A method includes: providing a solid body having opposite and substantially parallel first and second surfaces; and introducing laser radiation into an interior of the solid body via the first surface, the laser radiation producing modifications in the solid body. Linear shapes are produced by the modifications. The solid body cracks in a region of each respective modification. The cracks have orthogonality to a direction of longitudinal extent of the respective linear shape and an average crack length of less than 150 ?m. The modifications that belong to a same linear shape and successively produced are spaced at a distance from one another which is defined by: x>d, d being the diameter of a focal point of the laser radiation and x the distance between adjacent focal points of the laser radiation. The distance between two directly adjacent linear shapes in each case is less than 50 ?m.

Abstract: The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 ?m orthogonally to the direction of longitudinal extent of the linear form in question.

Abstract: A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Abstract: The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1).

Abstract: The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2).

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

Abstract: A method for producing a detachment region in a solid-state body includes: providing a solid body that consists of a chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements; providing a laser light source; and exposing the solid body to laser beams from the laser light source. The laser beams penetrate into the solid body via a main surface of the solid body and are applied in a defined manner on a predefined portion of the solid body within the solid body to form a detachment region. The application of the laser beams successively creates multiple modifications in a crystal lattice of the solid body which, as a result of the modifications, fissures in a subcritical manner at least in a portion in each case in regions that surround the modifications.

Abstract: The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

Abstract: A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

Abstract: The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed.

Abstract: The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10).

Abstract: Provided is a machining apparatus including a profile sensor unit configured to obtain shape information about a parent substrate; and a laser scan unit configured to direct a laser beam onto the parent substrate, wherein a laser beam axis of the laser beam is tilted to an exposed main surface of the parent substrate, and wherein a track of the laser beam on the parent substrate is controllable as a function of the shape information obtained from the profile sensor unit.

Abstract: The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4).

Abstract: Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.

Abstract: According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1).

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.

Abstract: A method and apparatus are provided. In an example, a volume portion of the solid body is exposed to light waves of different wavelengths, wherein the light waves are partly reflected at surfaces of the solid body. Light parameters of the reflected light waves are at least partly acquired using a sensor device. Distance information and/or intensity information are/is ascertained from at least a portion of the acquired light parameters. A thickness and/or a transmittance of the solid body in the volume portion are/is determined based upon the distance information and/or the intensity information. Laser radiation is introduced into the volume portion to produce a modification in the interior of the solid body, wherein at least one laser parameter of the laser radiation is set at least depending on the thickness and/or the transmittance such that the modification is at a predefined distance from a surface of the solid body.