Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.

Abstract: Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.

Abstract: A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

Abstract: A wafer handling device comprises metrology equipment (410, 420, 430, 440, 450, 460) for testing selected wafers as well as a stationary wafer storage system (300). The stationary wafer storage system (300) has a buffer (310) to store wafers and a load-and-unload station (320) to transfer selected wafers between the buffer (310) and wafer transport means (330). The wafer transport means are provided for transferring selected wafers between the load-and-unload station (320) and the metrology equipment (410, 420, 430, 440, 450, 460).

Abstract: Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.

Abstract: Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing, gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.

Abstract: In a CVD chamber (120) having a chuck (122) to hold a semiconductor substrate (100) and having a plasma generator (121) to generate a plasma (125), a trench in the substrate is filled with dielectric material from ions (126) of the plasma. The ions are forced to move in a direction (127) that is substantially perpendicular to the surface of the substrate by a pulsed unidirectional voltage between the plasma generator and the substrate, by a circular magnetic field, or by a combination of both fields.

Abstract: Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition of the polysilicon to define the doping profile. The feed of dopant to the process gas is stopped toward the end of the vapor deposition, with the result that a boundary layer of undoped silicon is deposited. As a result, a favorable surface quality and better adhesion to a neighboring layer is obtained. The structuring process comprises an at least three-step etching process in which a fluorine containing gas is used for etching in a first step, a chlorine-containing gas is used for etching in a second step and a bromine-containing gas is used for etching in a third step. The invention also encompasses wafers and semiconductor chips produced with the novel doping and/or structuring method.