Abstract: A z-interface-board includes an array of vias or holes for interconnecting z-plane modules with other electronic components. The vias are plated with an electrically conductive material to create conductive elements or connecting contacts on both sides of the board. The plating can be manipulated to form different contact configurations at the vias. Different types of tops for the vias on one side of the board may be used for mating with other electronic components. Different types of bottoms for the vias on the other side of the board may be used for mounting the interface board to the z-plane module. The interface board provides a flat wafer-like surface for allowing process development including indium bump bonding. After the process development, the interface board is mounted to a stacked z-plane module. This final mounting may be performed by hard solder bumps or pins, instead of the soft indium bumps.

Abstract: A focal plane detector mosaic array is formed by securing wafers of the detector material to a focal plane having individual conductor leads embedded therein, ion milling to delineate separate detector islands in individual electrical contact with the conductor leads, and using ion implantation to form p-n junctions in the detector islands.

Abstract: A focal plane detector mosaic array is formed by securing wafers of the detector material to a focal plane having individual conductor leads embedded therein, ion milling to delineate separate detector islands in individual electrical contact with the conductor leads, and using ion implantation to form p-n junctions in the detector islands.

Abstract: A photodetector system is used to resolve the wavelength of an unknown line source in a broad spectral range or to determine the temperature of blackbody or other broad band sources. The photodetector system includes two photodetectors having the same band gap but different thicknesses. The thicker of the two photodetectors receives radiation transmitted by the thinner photodetector. Because responsivity and quantum efficiency are influenced by detector thickness, a signal indicative of the wavelength or temperature is produced by taking the ratio of the signals from the two photodetectors.

Abstract: A photoconductive detector is formed in a single body of semiconductor material and is used for sensing electromagnetic radiation, such as infrared radiation. The photoconductive body has a cooling means proximate that body for maintaining the body at a predetermined quiescent temperature and also has output means connected to the body for receiving a signal from the body. Further included are heating means proximate said photoconductive body and adapted to heat the photoconductive body to a temperature above said quiescent temperature for a time sufficient to accelerate decay of the radiation produced signal.