Abstract: A parallel plate capacitor structure in an integrated circuit has a first plate and a second plate separated by an insulator, such as a dielectric. Both plates are connected to an interconnect structure at a plurality of connection points. The area of the first plate that overlaps with the second plate is identified. This overlap region does not include any connection points on the first plate. For this overlap region, the lumped element model for the first plate includes nodes on the edge of the overlap region (edge nodes), and lumped resistances between the edge nodes and the node connected to the lumped capacitance. In one embodiment, the lumped element model also includes a common node, all of the edge nodes are connected to the common node by lumped resistances, and the common node is connected by a negative resistance to the lumped capacitance.

Abstract: A parallel plate capacitor structure in an integrated circuit has a first plate and a second plate separated by an insulator, such as a dielectric. Both plates are connected to an interconnect structure at a plurality of connection points. The area of the first plate that overlaps with the second plate is identified. This overlap region does not include any connection points on the first plate. For this overlap region, the lumped element model for the first plate includes nodes on the edge of the overlap region (edge nodes), and lumped resistances between the edge nodes and the node connected to the lumped capacitance. In one embodiment, the lumped element model also includes a common node, all of the edge nodes are connected to the common node by lumped resistances, and the common node is connected by a negative resistance to the lumped capacitance.

Abstract: We disclose an integrated circuit design tool for modeling resistance of a terminal of a transistor such as a gate, a source, a drain, and a via. A structure of the terminal is specified in a data structure in memory using a three-dimensional (3D) coordinate system. For each of a plurality of volume elements in the specified structure, an Elmore delay time (EDT) is determined. For those volume elements in the plurality of volume elements that are located on a surface of the gate terminal which faces the channel region, an average EDT (aEDT) is determined based on the EDT. Point-to-point resistance values of the terminal are generated as a function of the aEDT and a capacitance of the terminal.

Abstract: The technology disclosed generates resistor values for networks with more than four terminals. In this case, all resistors in the network can be found by updating point-to-point (P2P) values as the network is reduced. To find the resistor value RAB between two terminals, A and B, the other terminals are effectively shorted together, reducing the network. Such reduction does not affect RAB. The point-to-point (P2P) resistance values are recalculated as other terminals are shorted. Once reduced to four terminals, the P2P resistance values are sufficient to determine RAB. Given six P2P resistance values, it generates the six resistor values required for the resistor network connecting the four terminals.

Abstract: We disclose an integrated circuit design tool for modeling resistance of a terminal of a transistor such as a gate, a source, a drain, and a via. A structure of the terminal is specified in a data structure in memory using a three-dimensional (3D) coordinate system. For each of a plurality of volume elements in the specified structure, an Elmore delay time (EDT) is determined. For those volume elements in the plurality of volume elements that are located on a surface of the gate terminal which faces the channel region, an average EDT (aEDT) is determined based on the EDT. Point-to-point resistance values of the terminal are generated as a function of the aEDT and a capacitance of the terminal.