Patents by Inventor Ralph C. Kerns

Ralph C. Kerns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for removal of metallic residue after plasma etching of a metal layer
    Patent number: 7320942
    Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
    Type: Grant
    Filed: November 1, 2002
    Date of Patent: January 22, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Xiaoyi Chen, Chentsau Ying, Padmapani C. Nallan, Ajay Kumar, Ralph C. Kerns, Ying Rui, Chun Yan, Guowen Ding, Wai-Fan Yau
  • Method for removal of metallic residue after plasma etching of a metal layer
    Publication number: 20030219912
    Abstract: A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
    Type: Application
    Filed: November 1, 2002
    Publication date: November 27, 2003
    Inventors: Xiaoyi Chen, Chentsau Ying, Padmapani C. Nallan, Ajay Kumar, Ralph C. Kerns, Ying Rui, Chun Yan, Guowen Ding, Wai-Fan Yau
  • Bias-tracking D.C. power circuit for an electrostatic chuck
    Patent number: 5737175
    Abstract: A DC power circuit for a electrostatic chuck adapted for use in a plasma etching system is disclosed. The power circuit receives an input that reflects a voltage bias on the workpiece caused by the application of an RF signal for creating the plasma. A DC power supply outputs a differential voltage that is balanced by inputting the voltage bias to a common reference node. The balanced DC output voltages are then presented to two electrodes of the ESC to create a clamping force securing the workpiece to the chuck at a lower voltage than would otherwise be applied in the absence of the bias feedback.
    Type: Grant
    Filed: June 19, 1996
    Date of Patent: April 7, 1998
    Assignee: Lam Research Corporation
    Inventors: Paul F. Grosshart, Ralph C. Kerns, Peter P. Laquidara