Abstract: A housing of a device comprises a screw boss that extends outwardly from a first base plate proximate to a corner of the housing. Additionally, the housing of the device includes a force dissipation member. The force dissipation member includes a central portion that is sized to detachably attach around the screw boss. The force dissipation member further includes at least two arms that extend outwardly from the central portion, wherein each arm of the at least two arms is attached to a different side of the two walls of the housing.

Abstract: A housing of a device comprises a screw boss that extends outwardly from a first base plate proximate to a corner of the housing. Additionally, the housing of the device includes a force dissipation member. The force dissipation member includes a central portion that is sized to detachably attach around the screw boss. The force dissipation member further includes at least two arms that extend outwardly from the central portion, wherein each arm of the at least two arms is attached to a different side of the two walls of the housing.

Abstract: A housing of a device comprises a screw boss that extends outwardly from a first base plate proximate to a corner of the housing. Additionally, the housing of the device includes a force dissipation member. The force dissipation member includes a central portion that is sized to detachably attach around the screw boss. The force dissipation member further includes at least two arms that extend outwardly from the central portion, wherein each arm of the at least two arms is attached to a different side of the two walls of the housing.

Abstract: A housing of a device comprises a screw boss that extends outwardly from a first base plate proximate to a corner of the housing. Additionally, the housing of the device includes a force dissipation member. The force dissipation member includes a central portion that is sized to detachably attach around the screw boss. The force dissipation member further includes at least two arms that extend outwardly from the central portion, wherein each arm of the at least two arms is attached to a different side of the two walls of the housing.

Abstract: This invention provides an improved antenna structure comprising a connecting unit having a connector, a lightning rod, and a signal transmission section. The two ends of the connector has the first and second connecting sections, with the signal transmission section extending out the first and second connecting sections; and a connecting unit connecting to the antenna unit, which contains at least an antenna board fixed to the first connecting section and the signal transmission section, and a set of housing installed at the outer section of the antenna board and connecting to the connector. Through this, the lightning rod, connecting unit, and antenna unit can be integrated together and the effectiveness of simple structure, ease to assemble, and lowered manufacturing cost can be achieved.

Abstract: This invention provides an improved antenna structure comprising a connecting unit having a connector, a lightning rod, and a signal transmission section. The two ends of the connector has the first and second connecting sections, with the signal transmission section extending out the first and second connecting sections; and a connecting unit connecting to the antenna unit, which contains at least an antenna board fixed to the first connecting section and the signal transmission section, and a set of housing installed at the outer section of the antenna board and connecting to the connector. Through this, the lightning rod, connecting unit, and antenna unit can be integrated together and the effectiveness of simple structure, ease to assemble, and lowered manufacturing cost can be achieved.

Abstract: A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a higher dielectric layer and coupling ratio to sustain the higher operating voltage, such that the operating capacitance can be raised. Moreover, the HV CMOS transistor is combined with a mirror layer which has a higher reflective property, such that the LCOS back-plate structure has the better contrast and chrominance output in per area unit, when the operating voltage range is increased.

Abstract: The method for forming high voltage device combined with a mixed mode process use an un-doped polysilicon layer instead of the conventional polysilicon layer. In the high resistance area, the ion implant is not used until the source region and the drain region are formed. A resistor is formed by etching oxide-nitride-oxide layer and performing ion implant process by using BF2 radical to the un-doped polysilicon layer to control the resistance. Then multitudes of contact are formed, wherein the high dosage of BF2 implant would reduce resistance between contacts and resistor.

Abstract: A method is provided to fabricate a LCOS back plane structure. The present invention utilized a HV device such as HV CMOS transistor (high voltage complementary metal oxide semiconductor transistor) and a HV capacitor layer are applied to the substrate. Furthermore, the HV capacitor layer has a higher dielectric layer and coupling ratio to sustain the higher operating voltage, such that the operating capacitance can be raised. Moreover, the HV CMOS transistor is combined with a mirror layer which has a higher reflective property, such that the LCOS back-plate structure has the better contrast and chrominance output in per area unit, when the operating voltage range is increased.

Abstract: A method for forming a high resistance resistor with an integrated high voltage device process is disclosed. First and second field oxide areas are formed on a substrate and an undoped first polysilicon layer is deposited. A first photoresist layer having a resistor pattern is formed on the first field oxide area and a first ion implant process is performed with the first photoresist layer as a mask which is then removed and an oxide nitride oxide (ONO) layer is formed on the first polysilicon layer. The ONO layer and the first polysilicon layer are etched to form a resistor on the first field oxide area and a first electrode of a capacitor on the second field oxide area. A second polysilicon layer is formed on the capacitor ONO layer as a second electrode of the capacitor. A second photoresist layer is formed on the substrate, the resistor and the capacitor and has an opening pattern to expose the resistor. The ONO layer is removed from the resistor.

Abstract: A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the closure trigger has been activated. Another mechanism in the stapler is capable of locking the closure trigger after use so it does not spring open inadvertently before use of the firing trigger. Additionally, the stapler mechanism allows forward motion of both triggers and also is capable of allowing reverse motion of the closure trigger to open the mechanism.

Abstract: A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the closure trigger has been activated. Another mechanism in the stapler is capable of locking the closure trigger after use so it does not spring open inadvertently before actuation of the firing trigger. Additionally, the stapler mechanism allows forward motion of both triggers and also is capable of allowing reverse motion of the closure trigger to open the mechanism. Furthermore, the stapler mechanism contains means for obstructing the flow of insufflation gasses or bodily fluid from the surgical site through the instrument during endoscopic surgery.

Abstract: A stapler mechanism is described which contains a stapling assembly, and anvil assembly, firing means and knife means. These means are activated by a firing trigger. The anvil assembly is closed upon the stapling assembly by means of a closure trigger. The firing trigger is inoperable until the closure trigger has been activated. Another mechanism in the stapler is capable of locking the closure trigger after use so it does not spring open inadvertently before use of the firing trigger. Additionally, the stapler mechanism allows forward motion of both triggers and also is capable of allowing reverse motion of the closure trigger to open the mechanism.