Abstract: [Problem] to provide an aromatic imide compound wherein the sensitivity for visible light such as g-line, h-line etc. is increased and solubility is also improved. [Means for solving problem] The aromatic imide compound of the invention is a compound represented by the formula (1) below (in the formula, R1 represents a haloalkyl group having 1 to 7 carbon atoms or a haloaryl group, R2 represents a group containing a substituted or unsubstituted, aliphatic or aromatic group which may have a heteroatom, and adjacent R2s may form an imido group by connecting each other, R3 represent a halogen atom or a hydrocarbon group, m is zero or an integer of 1 or more, n is zero or an integer of 1 or more, and a sum of n and m is 1 to 6). These compounds are obtained by following processes. A halogenated naphtharic anhydride is reacted with an aromatic group-containing hydrocarbon such as ethynylbenzene to prepare a naphthalic anhydride substituted by an aromatic group-containing group.

Abstract: [Problem] to provide an aromatic imide compound wherein the sensitivity for visible light such as g-line, h-line etc. is increased and solubility is also improved. [Means for solving problem] The aromatic imide compound of the invention is a compound represented by the formula (1) below (in the formula, R1 represents a haloalkyl group having 1 to 7 carbon atoms or a haloaryl group, R2 represents a group containing a substituted or unsubstituted, aliphatic or aromatic group which may have a heteroatom, and adjacent R2s may form an imido group by connecting each other, R3 represent a halogen atom or a hydrocarbon group, m is zero or an integer of 1 or more, n is zero or an integer of 1 or more, and a sum of n and m is 1 to 6). These compounds are obtained by following processes. A halogenated naphtharic anhydride is reacted with an aromatic group-containing hydrocarbon such as ethynylbenzene to prepare a naphthalic anhydride substituted by an aromatic group-containing group.

Abstract: The present invention relates to an antireflective coating composition comprising a novel polymer without an aromatic chromophore, where the polymer comprises a structural unit derived from an aminoplast and a structural unit derived from a diol, triol, dithiol, trithiol, other polyols, diacid, triacid, other polyacids, diimide or mixture thereof, where the diol, dithiol, triol, trithiol, diacid, triacid, diimide, diamide or imide-amide optionally contain one or more nitrogen and/or sulfur atoms or contain one or more alkene groups. The invention also relates to the novel polymer and a process for using the novel antireflective coating composition in a lithographic process.

Abstract: Antireflective coatings and related polymers are disclosed.

Abstract: The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.

Abstract: The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.

Abstract: A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Abstract: The present application relates to a compound of formula A-X-B, where (i) A-X-B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R500—SO3? or (ii) A-X-B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R500, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.

Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coatings with a developer.

Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.

Abstract: The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.

Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

Abstract: The present invention relates to novel negative-working, photoimageable, and aqueous developable antireflective coating compositions and their use in image processing by forming a thin layer of the novel antireflective coating composition between a reflective substrate and a photoresist coating. The negative bottom photoimageable antireflective coating composition is capable of being developed in an alkaline developer and is coated below a negative photoresist.

Abstract: The present invention relates to an aqueous based edge bead remover.

Abstract: The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about ?9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.

Abstract: The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about ?9 to about 11. The invention also relates to a process for imaging a photoresist with a top barrier coat to prevent contamination of the photoresist from environmental contaminants.

Abstract: The present invention relates to a process for imaging deep ultraviolet (uv) photoresists with a topcoat using deep uv immersion lithography. The invention further relates to a topcoat composition comprising a polymer with at least one ionizable group having a pKa ranging from about ?9 to about 11.

Abstract: A photoresist that is suitable for use in 157 nm photolithography includes a polymer based on fluorinated norbornene derivatives.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: A negative-working radiation-sensitive mixture containinga) a compound which generates a strong acid under the action of actinic radiation,b) a compound having at least two groups crosslinkable by means of acid andc) a polymeric binder which is insoluble in water and soluble or at least swellable in aqueous alkaline solutions,wherein the compound (a) comprises a di-, tri- or tetra-hydroxybenzene which may be further substituted, or a polymer containing a di-, tri-, or tetra- hydroxy phenyl radical, is esterified with respectively 2, 3 or 4 sulfonic acids of the formula R--SO.sub.3 H, and is distinguished by high resolution and high sensitivity over a wide spectral range. It also shows high thermal stability and does not form any corrosive photolysis products on exposure. A radiation-sensitive recording material produced with this mixture is suitable for the production of photoresists, electronic components, printing plates or for chemical milling.