Patents by Inventor Ralph H. Lovberg

Ralph H. Lovberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5207760
    Abstract: This invention discloses an engine for use in sustained space travel. The engine is of an electric type powered by a nuclear reactor. The electric engine includes a pulsed inductive magnetic thruster. A gas is discharged against an inductor comprising a series of parallel coils arranged in a spiral fashion. Each coil consists of four separate electrically connected coil sections. Each coil section traverses one-quarter of the distance around the inductor from an outer perimeter to an inner perimeter to form a single closed loop. A capacitor is electrically connected to two outer perimeter connector points for each coil forming a Marx Bank arrangement. All capacitors are charged to full charge and discharged simultaneously by a trigger generator immediately after a puff of propellant gas reaches the inductor. The high induced EMF in the inductor caused by the multiple capacitors in series in a single loop creates a rapidly rising magnetic field which ionizes the propellant gas.
    Type: Grant
    Filed: July 23, 1991
    Date of Patent: May 4, 1993
    Assignee: TRW Inc.
    Inventors: Charles L. Dailey, Ralph H. Lovberg, James L. Hieatt
  • Patent number: 5204506
    Abstract: The inventive system treating the surface of a material by utilizing high intensity ultraviolet light for glazing, cleaning and other such purposes. The system includes a high intensity ultraviolet light is generated by a liquid jet plasma pinch unit, and is repetitively pulsed to raise the surface temperature of the material rapidly to a predetermined high temperature. In one form of the invention, the system is mounted either on a vehicle, or on an overhead structure for facilitating the movement of the pinch unit to the surface to be treated. In another form of the invention, the pinch unit includes a light emitting assembly which can be lowered into an opening in a workpiece to be treated.
    Type: Grant
    Filed: October 24, 1989
    Date of Patent: April 20, 1993
    Assignee: The Regents of the University of California
    Inventors: John F. Asmus, Ralph H. Lovberg
  • Patent number: 5170623
    Abstract: A hybrid chemical/electromagnetic propulsion system which combines thermal expansion of a chemically-reacted propellant with electromagnetic acceleration of the propellant to provide an efficient propulsion system that operates in the specific impulse I.sub.sp range of 800 to 2500 seconds. The hybrid chemical/electromagnetic propulsion system includes a reaction chamber, an expansion nozzle mounted to the exit of the reaction chamber, and an induction coil wound around a portion of the expansion nozzle. The reaction chamber supports the combustion or chemical reaction of a propellant to form high-temperature ionizable reaction products. The expansion nozzle then expands these high-temperature reaction products to generate thrust. The induction coil generates a varying electric and magnetic field which ionizes and magnetically accelerates the reaction products to generate additional thrust. A drive circuit supplies current to the induction coil in a manner that maximizes this additional thrust.
    Type: Grant
    Filed: January 28, 1991
    Date of Patent: December 15, 1992
    Assignee: TRW Inc.
    Inventors: Charles L. Dailey, Ralph H. Lovberg, Robert L. Sackheim, John J. Biess
  • Patent number: 5079187
    Abstract: A method for processing semiconductor material for annealing or circuitizing purposes, includes establishing a high intensity light which is controlled at a high repetition rate, and exposing it toward the surface of the semiconductor material to process it in an improved manner. The high speed light is directed transversely to the surface of the material to be processed, only to a shallow depth.
    Type: Grant
    Filed: May 4, 1989
    Date of Patent: January 7, 1992
    Assignee: The Regents of the University of California
    Inventors: John F. Asmus, Ralph H. Lovberg
  • Patent number: 5048163
    Abstract: A system for processing the surface of semiconductor material for annealing and etching purposes. The system established a high intensity ultraviolet light which is repetitively pulsed to rapidly raise the surface temperature of the semiconductor material to a predetermined temperature for either etching or annealing purposes.
    Type: Grant
    Filed: May 4, 1989
    Date of Patent: September 17, 1991
    Inventors: John F. Asmus, Ralph H. Lovberg
  • Patent number: 4994715
    Abstract: A plasma pinch system includes a fluid-jet pinch device for establishing a plasma source composed of a tenuous vapor preconditioning cloud surrounding a central narrow flowing fine stream of fluid under pressure. A discharge device is connected electrically to the fluid-jet pinch device for supplying an electrical flow through a portion of the fluid stream for establishing an incoherent light emitting plasma therealong. A method of using the plasma pinch system for manufacturing semiconductors, includes exposing a semiconductor wafer to the incoherent light emitted by the plasma for either annealing or etching purposes.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: February 19, 1991
    Assignee: The Regents of the University of California
    Inventors: John F. Asmus, Ralph H. Lovberg, Keith Boyer
  • Patent number: 4889605
    Abstract: A plasma pinch system includes a fluid-jet pinch device for establishing a plasma source composed of a tenuous vapor preconditioning cloud surrounding a central narrow flowing fine stream of fluid under pressure. A discharge device is connected electrically to the fluid-jet pinch device for supplying an electrical flow through a portion of the fluid stream for establishing an incoherent light emitting plasma therealong. A method of using the plamsa pinch system for manufacturing semiconductors, includes exposing a semiconductor wafer to the incoherent light emitted by the plasma for either annealing or etching purposes.
    Type: Grant
    Filed: December 7, 1987
    Date of Patent: December 26, 1989
    Assignee: The Regents of the University of California
    Inventors: John F. Asmus, Ralph H. Lovberg