Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.

Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.

Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).

Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.

Abstract: A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).