Abstract: A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

Abstract: A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate (1) with at least one functional layer (22), and an electronic component, applying at least one first barrier layer (3) on the functional layer (22) by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by way of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100° C.

Abstract: Forming an arrangement of two ceramic barrier layers (5, 10) on a polymeric substrate (1) includes the steps of applying a first ceramic barrier layer (5) on the substrate (1). The surface (5A) of the first barrier layer (5) is modified to introduce new nucleation sites on the surface of the first layer. A second ceramic barrier layer (10) is formed on the first barrier layer (5) using the new nucleation sites. The second ceramic barrier layer is deposited with independent nucleation sites such that a barrier stack of enhanced quality is formed.

Abstract: An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Abstract: A solution-processed organic electronic structural element has an improved electrode layer. Located between the active organic layer and the electrode layer there is either an interface or an interlayer containing a cesium salt.

Abstract: A method for producing an electronic component and an electronic component, having barrier layers for the encapsulation of the component. The method involves providing a substrate (1) with at least one functional layer (22), and an electronic component, applying at least one first barrier layer (3) on the functional layer (22) by way of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by way of plasma-enhanced chemical v0apor deposition (PECVD).

Abstract: A method for producing an organic radiation-emitting component is specified, which comprises, in particular, the following method steps: A) providing a first electrode layer (2) on a substrate (1), B) applying a structured electrically conductive layer (3) on the first electrode layer (2), wherein the electrically conductive layer (3) comprises a metal, C) producing an electrically insulating layer (4) comprising an oxide of the metal of the electrically conductive layer (3) on surfaces (31) of the electrically conductive layer (3) which are remote from the first electrode layer (2) by oxidation of the metal, D) applying at least one organic functional layer (5) on the first electrode layer (2) and the electrically insulating layer (4), and E) applying a second electrode layer (9) on the at least one organic functional layer (5). An organic radiation-emitting component is furthermore specified.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasmaless atomic layer deposition (PLALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).

Abstract: Forming an arrangement of two ceramic barrier layers (5, 10) on a polymeric substrate (1) includes the steps of applying a first ceramic barrier layer (5) on the substrate (1). The surface (5A) of the first barrier layer (5) is modified to introduce new nucleation sites on the surface of the first layer. A second ceramic barrier layer (10) is formed on the first barrier layer (5) using the new nucleation sites. The second ceramic barrier layer is deposited with independent nucleation sites such that a barrier stack of enhanced quality is formed.

Abstract: The description covers cabin components for aircraft, which can be produced with a sandwich structure and may have the components 1003 for signal and/or power transmission. The cabin components in this case have at least two prepreg layers 1001, 1005 and, for example, a honeycomb layer 1002, which can be connected to one another by pressing and heating. Furthermore, electrical and/or optical signal paths are shown on cabin components, which can be produced by positioning them there or printing. In addition, according to the description, signal and/or power transmission can take place beyond the boundary of cabin components, by means of a transmitter/receiver path.

Abstract: Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF?EHOMO,Inj.??EHOMO,Plan. and EF?EHOMO,Inj<EHOMO,Funk. or in the case that the first electrode is a cathode, the following applies for the energy levels: ELUMO,Inj.?EF?ELUMO,Plan.?EF and ELUMO,Inj.?EF<ELUMO,Funk.?EF, wherein EF is the fermi energy, EHOMO is the energy of the highest occupied energy level of the respective layer and ELUMO is the energy of the lowest unoccupied energy level of the respective layer.

Abstract: An organic light-emitting diode includes an organic light-emitting layer located between a transparent electrode and one other electrode on a substrate. In some embodiments at least one of the transparent electrode and the other electrode has two layers. The two layers include a structured layer, which is a charge carrier injection layer, and a conductive second layer into which the first layer is embedded. In some embodiments the organic light-emitting layer includes a structured charge carrier blocking layer.

Abstract: A method for producing an organic radiation-emitting component is provided, comprising the following steps: A) providing an organic radiation-emitting layer sequence (10) having at least one organic functional layer (3), which is suited to emit electromagnetic radiation during operation, and a transparent layer (11), B) applying a transparent radiation decoupling layer (20) having a surface structure (21) onto a surface (12) of the transparent layer (11) facing away from the at least one functional layer (3) by means of spray coating. Furthermore, an organic radiation-emitting component is provided.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate with at least one functional layer, applying at least one first barrier layer on the functional layer via plasma enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer on the functional layer by means of plasma-enhanced chemical vapor deposition (PECVD), where the at least one first barrier layer is applied at a temperature of less than 100° C.

Abstract: An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminium, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Abstract: A device that includes a component and an encapsulation arrangement for the encapsulation of the component with respect to moisture and/or oxygen, wherein the encapsulation arrangement has a first layer and thereabove a second layer on at least one surface of the component, the first layer and the second layer each comprise an inorganic material, and the second layer is arranged directly on the first layer.

Abstract: An optoelectronic component having a substrate (1), an anode (2) and a cathode (10) and at least one active layer (6) disposed between the anode and the cathode. An amorphous dielectric layer (3) which contains or consists of a metal oxide, a metal nitride or a metal oxynitride is disposed directly on the cathode-side surface of the anode. The metal contained in the metal oxide, metal nitride or metal oxynitride is selected from one or several of the metals of the group consisting of aluminum, gallium, titanium, zirconium, hafnium, tantalum, lanthanum and zinc.

Abstract: A method for producing an electronic component comprising barrier layers for the encapsulation of the component comprises, in particular, the following steps: providing a substrate (1) with at least one functional layer (22), applying at least one first barrier layer (3) on the functional layer (22) by means of plasma-enhanced atomic layer deposition (PEALD), and applying at least one second barrier layer (4) on the functional layer (22) by means of plasma-enhanced chemical vapor deposition (PECVD).