Abstract: The present invention relates to an aneurysm stent for implantation into a living body, in particular for treatment of aneurysms, in order to implant the stent in the compressed state in a vessel and expand the stent after positioning it in the vessel, having a grid or mesh structure and at least one membrane (2) or a plurality of membranes (2) for covering at least one or more stent cells (1; 3) in the grid or mesh structure, thereby matching the permeation characteristics of the stent structure to the particular characteristics of the aneurysm.

Abstract: The present invention relates to an aneurysm stent for implantation into a living body, in particular for treatment of aneurysms, in order to implant the stent in the compressed state in a vessel and expand the stent after positioning it in the vessel, having a grid or mesh structure and at least one membrane (2) or a plurality of membranes (2) for covering at least one or more stent cells (1; 3) in the grid or mesh structure, thereby matching the permeation characteristics of the stent structure to the particular characteristics of the aneurysm.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.

Abstract: A fully packaged current monitor system for galvanically isolated current measurement is manufactured in line with commercial IC fabrication and LOC packaging technology. A current path is part of the lead frame on which a die with sensor means is mounted with the aid of an electrically insulating correspondingly pre-patterned glue tape, the structured surface of the die facing the lead frame. The system manufactured in this way achieves for currents up to +/−10 A, a system accuracy of better than 50 mA and is applicable for currents up to the order of 50 A. The system performance can be further improved by ferromagnetic field concentrators and on-chip compensation techniques.

Abstract: The method serves for dynamically compensating the offset voltage of a Hall device. The Hall device can have either a platelike structure with at least two contact pairs, or any other arrangement deriveable by conformal mapping. The contact pairs are angled by e.g. 90.degree.. Each pair is supplied with a periodically alternating current whereby the phase shift of the supply currents corresponds to the spatial phase shift of the contact pairs and is e.g. 90.degree.. Superposition of the supplied currents results in a continuously spinning current vector in the Hall device. By measuring simultaneously the voltages between corresponding terminals, a signal consisting of the Hall voltage and a periodic offset voltage can be isolated. The offset voltage is eliminated by averaging the signal over at least one period.