Abstract: A sensor module comprises a master sensor unit for sensing a first environmental parameter, a slave sensor unit for sensing a second environmental parameter, a common substrate on which the master sensor unit and the slave sensor unit are mounted, and a digital bus interface for a communication between the master sensor unit and the slave sensor unit. The master sensor unit comprises a non-volatile memory for storing calibration data and configuration data of the master sensor unit and the slave sensor unit. The master sensor unit is embodied as a first chip, and the slave sensor unit is embodied as a second chip. Such sensor module is compact, robust and versatile.

Abstract: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighboring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level.

Abstract: In a sensor circuit arrangement, a capacitance of a sensor capacitor is measured by a circuit which supplies a corresponding sensor signal. The circuit comprises a differential amplifier with an input, an output and a feedback loop between the input and the output. It further comprises a first capacitor arranged in the feedback loop, and a switching arrangement for charging the sensor capacitor from a voltage source in a first phase and for transferring a charge from the sensor capacitor to the integrating capacitor in a second phase. The circuit further comprises a second capacitor arranged in parallel to the first capacitor in the second phase for limiting a gain of noise generated by the differential amplifier. The sensor circuit arrangement further includes a low pass filter for filtering the sensor signal.

Abstract: The present invention relates to an aneurysm stent for implantation into a living body, in particular for treatment of aneurysms, in order to implant the stent in the compressed state in a vessel and expand the stent after positioning it in the vessel, having a grid or mesh structure and at least one membrane (2) or a plurality of membranes (2) for covering at least one or more stent cells (1; 3) in the grid or mesh structure, thereby matching the permeation characteristics of the stent structure to the particular characteristics of the aneurysm.

Abstract: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighbouring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level.

Abstract: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighbouring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level.

Abstract: The present sensor chip comprises a substrate. A plurality of electrode elements is arranged at a first level on the substrate with at least one gap between neighbouring electrode elements. A metal structure is arranged at a second level on the substrate, wherein the second level is different from the first level. The metal structure at least extends over an area of the second level that is defined by a projection of the at least one gap towards the second level.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.

Abstract: The present invention relates to an aneurysm stent for implantation into a living body, in particular for treatment of aneurysms, in order to implant the stent in the compressed state in a vessel and expand the stent after positioning it in the vessel, having a grid or mesh structure and at least one membrane (2) or a plurality of membranes (2) for covering at least one or more stent cells (1; 3) in the grid or mesh structure, thereby matching the permeation characteristics of the stent structure to the particular characteristics of the aneurysm.

Abstract: A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating covers the membrane, but it preferably leaves all the active electronic components integrated on the semiconductor chip (1) uncovered, such that their electrical properties are not affected.

Abstract: The flow sensor comprises a semiconductor device (1) on which a heat source and, symmetrically thereto, two temperature sensors are arranged. The semiconductor device (1) is arranged on an exterior side of a tube section (2), and a liquid, the flow velocity of which has to be measured, is led through the tube section (2). The temperature sensors and the heat source are in thermal contact with the exterior side of the tube section (2). It has been found that such an assembly allows to carry out flow measurements with high accuracy and sensitivity.

Abstract: The invention relates to a flow sensor comprising a substrate with integrated heat source and temperature sensors. Solder bumps are arranged on the heat source and the temperature sensors and the substrate is attached to the outside of a tube using flip chip technology. Preferably, the outside of the tube is structured for being wetted at appropriate positions by the solder. This allows to assemble the sensor easily and accurately.

Abstract: The invention relates to a flow sensor comprising a substrate with integrated heat source and temperature sensors. Solder bumps are arranged on the heat source and the temperature sensors and the substrate is attached to the outside of a tube using flip chip technology. Preferably, the outside of the tube is structured for being wetted at appropriate positions by the solder. This allows to assemble the sensor easily and accurately.

Abstract: The flow sensor comprises a semiconductor device (1) on which a heat source and, symmetrically thereto, two temperature sensors are arranged. The semiconductor device (1) is arranged on an exterior side of a tube section (2), and a liquid, the flow velocity of which has to be measured, is led through the tube section (2). The temperature sensors and the heat source are in thermal contact with the exterior side of the tube section (2). It has been found that such an assembly allows to carry out flow measurements with high accuracy and sensitivity.

Abstract: A fully packaged current monitor system for galvanically isolated current measurement is manufactured in line with commercial IC fabrication and LOC packaging technology. A current path is part of the lead frame on which a die with sensor means is mounted with the aid of an electrically insulating correspondingly pre-patterned glue tape, the structured surface of the die facing the lead frame. The system manufactured in this way achieves for currents up to +/−10 A, a system accuracy of better than 50 mA and is applicable for currents up to the order of 50 A. The system performance can be further improved by ferromagnetic field concentrators and on-chip compensation techniques.

Abstract: The method serves for dynamically compensating the offset voltage of a Hall device. The Hall device can have either a platelike structure with at least two contact pairs, or any other arrangement deriveable by conformal mapping. The contact pairs are angled by e.g. 90.degree.. Each pair is supplied with a periodically alternating current whereby the phase shift of the supply currents corresponds to the spatial phase shift of the contact pairs and is e.g. 90.degree.. Superposition of the supplied currents results in a continuously spinning current vector in the Hall device. By measuring simultaneously the voltages between corresponding terminals, a signal consisting of the Hall voltage and a periodic offset voltage can be isolated. The offset voltage is eliminated by averaging the signal over at least one period.