Abstract: A method for processing a semiconductor wafer sliced from a single-crystal ingot comprises subjecting the front and back surfaces of the wafer to a lapping operation to reduce the thickness of the wafer and to remove damage caused during slicing of the wafer. The wafer is then subjected to an etching operation to further reduce the thickness of the wafer and to further remove damage remaining after the lapping operation. The wafer is subsequently subjected to a double-side polishing operation to uniformly remove damage from the front and back surfaces caused by the lapping and etching operations, thereby improving the flatness of the wafer and leaving polished front and back surfaces. Finally, the back surface of the wafer is subjected to a back surface damaging operation in which damage is induced in the back surface of the wafer while the front surface is substantially protected against being damaged or roughened.

Abstract: A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges.

Abstract: A method of conditioning a polishing pad for use with a polishing machine. The method includes installing the polishing pad to be conditioned on the polishing machine's platen and applying a conditioning load force to the pad. In addition, the method includes supplying a slurry to the pad at a conditioning flow rate. The conditioning load force is greater than a polishing load force applied during a conventional wafer polishing cycle to compress the pad and the conditioning flow rate is greater than a polishing flow rate at which the slurry is supplied during the wafer polishing cycle to load the pad's pores with abrasive material. The method also includes the step of operating the polishing machine for a conditioning cycle while applying the conditioning load force and supplying the slurry at the conditioning flow rate. In this manner, the polishing pad is conditioned for use with the polishing machine for subsequently polishing the semiconductor wafers with the conditioned pad.