Abstract: An optical system including: a substrate having a recess; and, a substantially planar, semiconductor waveguiding membrane suspended over the recess and having a thickness less than about 200 nm; wherein, the optical system supports a propagating optical mode having a majority of its energy external to the semiconductor waveguiding membrane.

Abstract: A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

Abstract: A high efficiency, low voltage defect laser, and a method of forming a high efficiency laser. The low voltage defect laser includes at least one p-clad layer, at least one n-clad layer, and at least one waveguide of at least a plurality of quantum wells. The at least one waveguide is sandwiched at least between the p-clad layer and the n-clad layer, and at least one permeable crystal layer may be embedded in the p-clad layer and immediately adjacent to the at least one waveguide. The method includes growing an AlGaAs layer atop a GaAs layer, etching of the AlGaAs into submicron structure, oxidizing the AlGaAs, SAG undoped growing of an SAG undoped GaAs atop the GaAs layer, and regrowing, with p++ doped GaAs, of a planar-buried p++ GaAs.

Abstract: A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.