Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Abstract: A radiation emitting device for emitting light may include a laser light source configured to emit light along an emitting direction, and a non-imaging optical system arranged downstream of the laser light source in the emitting direction. The optical system may include a plurality of optical elements arranged along the emitting direction for shaping a radiation characteristic of the radiation emitting device in a horizontal direction and a vertical direction perpendicular to the horizontal direction, such that the radiation characteristic is asymmetrical along the vertical direction. A first optical element of the optical system may be configured to cause spreading of the light along the horizontal direction; a second optical element of the optical system may be configured to cause collimation of the light along the vertical direction, and a third optical element of the optical system may be configured to cause radiation asymmetry along the vertical direction.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

Abstract: An optoelectronic device, in particular for the detection of obstacles and/or for distance measurement, may include a transmitting device for emitting laser beams. The transmitting device may include an array of pixels where each pixel of the pixel array comprises at least one laser, such as an optoelectronic laser, e.g. a VCSEL. The pixels of the pixel array may be divided into several sets of pixels, and the transmitting device may be configured to operate the sets of pixels in different, successive time intervals.

Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier; arranging at least one optoelectronic semiconductor chip at a top side of the carrier, wherein the semiconductor chip includes semiconductor layers deposited on a substrate; forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip and at least some of the layers deposited on the substrate are free of the shaped body such that these layers are not covered or completely exposed; and removing the carrier.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

Abstract: An LED unit comprises a substrate and a first LED chip. The first LED chip may include a first light-emitting surface arranged on the substrate in such a way that light emitted from the first LED chip radiates in a direction of radiation of the LED unit. The LED unit includes a second LED chip comprising a second light-emitting surface and arranged above the first LED chip in such a way that the second LED chip at least partially covers the first LED chip and radiates light emitted from the second LED chip in the direction of radiation of the LED unit. The LED unit comprises a first conversion layer at least partially covering the first light-emitting surface and/or at least partially laterally surrounding the first LED chip. A second conversion layer at least partially covers the second LED chip.

Abstract: A TOF camera for determining a distance to an object comprising: a radiation source configured to emit electromagnetic radiation toward the object, radiation-sensitive sensor elements configured and arranged to detect the electromagnetic radiation reflected/scattered by the object, an optical element arranged to influence the emitted electromagnetic radiation in the radiation path of the reflected/scattered electromagnetic radiation between the object and the sensor elements, a computing unit electrically connected to the radiation source and sensor elements configured to determine a time duration required by the electromagnetic radiation from the radiation source to the object; from the object to the sensor elements; and to determine the distance between the TOF camera and the object depending on the time duration determined.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier, arranging at least one optoelectronic semiconductor chip at a top side of the carrier, applying a phosphor layer at the at least one semiconductor chip, forming a shaped body around the at least one optoelectronic semiconductor chip, wherein the shaped body surrounds all side areas of the at least one optoelectronic semiconductor chip, and removing the carrier, wherein the phosphor layer is applied before forming the shaped body.

Abstract: An LED unit comprises a substrate and a first LED chip. The first LED chip may include a first light-emitting surface arranged on the substrate in such a way that light emitted from the first LED chip radiates in a direction of radiation of the LED unit. The LED unit includes a second LED chip comprising a second light-emitting surface and arranged above the first LED chip in such a way that the second LED chip at least partially covers the first LED chip and radiates light emitted from the second LED chip in the direction of radiation of the LED unit. The LED unit comprises a first conversion layer at least partially covering the first light-emitting surface and/or at least partially laterally surrounding the first LED chip. A second conversion layer at least partially covers the second LED chip.

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers.

Abstract: Various embodiments may relate to A light-emitting diode, including an LED chip having at least one emitter surface for emitting primary light, and a plurality of luminescent regions, which are connected optically downstream from the at least one emitter surface. At least one harder one of the luminescent regions is embedded in another, softer one of the luminescent regions.

Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.