Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?1, wherein ?1 represents model vs. exposure difference and ?1 represents predetermined criteria. The technique further includes completing the model when ?1<?1.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns for an integrated circuit is compared against the simulated, corrected reticle design. A determination is made as to whether a difference between the simulated, corrected reticle design and exposure results of the image of the test patterns (?1) is less than a predetermined criteria (?1). The technique further includes completing the model the difference between the simulated, corrected reticle design and the exposure results of the image of the test patterns is less than the predetermined criteria.

Abstract: A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.

Abstract: A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether ?1<?-1, wherein ?1 represents model vs. exposure difference and ?-1 represents predetermined criteria. The technique further includes completing the model when ?1<?-1.