Patents by Inventor Rama Kambhampati
Rama Kambhampati has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9634010Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: GrantFiled: May 31, 2016Date of Patent: April 25, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Patent number: 9607903Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: GrantFiled: August 31, 2016Date of Patent: March 28, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Publication number: 20170040453Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: ApplicationFiled: August 4, 2015Publication date: February 9, 2017Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Publication number: 20170040325Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: ApplicationFiled: May 31, 2016Publication date: February 9, 2017Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Publication number: 20170040224Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: ApplicationFiled: August 31, 2016Publication date: February 9, 2017Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Patent number: 9548388Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: GrantFiled: August 4, 2015Date of Patent: January 17, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES, INC.Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Patent number: 9472670Abstract: A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.Type: GrantFiled: March 30, 2016Date of Patent: October 18, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.Inventors: Rama Kambhampati, Junli Wang, Ruilong Xie, Tenko Yamashita
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Patent number: 9252245Abstract: A methodology for spacer-last replacement metal gate (RMG) flow that exhibits reduced variability, and the resulting device are disclosed. Embodiments may include forming a dummy gate stack comprising a dummy nitride portion on a dummy oxide portion on a substrate, forming source/drain regions in the substrate at opposite sides of the dummy gate stack, depositing an insulating material over the source/drain regions, coplanar with the dummy gate stack, and replacing the dummy gate stack with a metal gate stack and spacers.Type: GrantFiled: September 5, 2014Date of Patent: February 2, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Murat Akarvardar, Rama Kambhampati
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Patent number: 9129987Abstract: A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.Type: GrantFiled: January 24, 2014Date of Patent: September 8, 2015Assignee: GLOBAL FOUNDRIES, Inc.Inventors: Jing Wan, Jin Ping Liu, Guillaume Bouche, Andy Wei, Lakshmanan H. Vanamurthy, Cuiqin Xu, Sridhar Kuchibhatla, Rama Kambhampati, Xiuyu Cai
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Publication number: 20150214330Abstract: A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.Type: ApplicationFiled: January 24, 2014Publication date: July 30, 2015Applicant: GLOBALFOUNDRIES Inc.Inventors: Jing WAN, Jin Ping LIU, Guillaume BOUCHE, Andy WEI, Lakshmanan H. VANAMURTHY, Cuiqin XU, Sridhar KUCHIBHATLA, Rama KAMBHAMPATI, Xiuyu CAI
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Publication number: 20070142398Abstract: Tetracyclic 3-substituted indoles having serotonin receptor affinity and pharmaceutically acceptable salts thereof.Type: ApplicationFiled: December 16, 2003Publication date: June 21, 2007Inventors: Venkata Ramakrishna, Vikas Shirsath, Rama Kambhampati, Venkata Satya Veerabhadra Rao, Venkateswarlu Jasti
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Publication number: 20060223890Abstract: N-arylsulfonyl-3-substituted indole compounds, derivatives, analogs, tautomeric forms, stereoisomers, geometric forms, N-oxides, polymorphs and pharmaceutically acceptable salts.Type: ApplicationFiled: June 5, 2003Publication date: October 5, 2006Inventors: Venkata Ramakrishna, Vikas Shirsath, Rama Kambhampati, Venkata Satya Rao, Venkateswarlu Jasti
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Publication number: 20060173193Abstract: N-arylsulfonyl-3-aminoalkoxyindoles indole compounds, radioisotopes, stereoisomers, geometric forms, N-oxides, polymorphs and pharmaceutically acceptable salts.Type: ApplicationFiled: November 25, 2003Publication date: August 3, 2006Inventors: Venkata Ramakrishna, Vikas Shirsath, Rama Kambhampati, Venkata Satya Veerabhadra Rao, Venkatswarlu Jasti
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Publication number: 20050250834Abstract: The present invention relates to novel tetracyclic arylcarbonyl indoles, their derivatives, their analogues, their tautomeric forms, their stereoisomers, their polymorphs, their pharmaceutically acceptable salts, their pharmaceutically acceptable solvates, novel intermediates described herein and pharmaceutically acceptable compositions containing them. This invention particularly relates to novel tetracyclic arylcarbonyl indoles of the general formula (I), their derivatives, their analogues, their tautomeric forms, their stereoisomers, their polymorphs, their pharmaceutically acceptable salts, their pharmaceutically acceptable solvates, novel intermediates described herein and pharmaceutically acceptable compositions containing them.Type: ApplicationFiled: June 19, 2003Publication date: November 10, 2005Applicant: SUVEN LIFE SCIENCES LIMITEDInventors: Venkateswarlu Jasti, Venkata Satya Ramakrishna, Rama Kambhampati, Srinivasa Battula, Venkata Satya Veerabhadra Rao
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Publication number: 20050203103Abstract: The present invention relates to novel tetracyclic arylalkyl indoles, their derivatives, their analogues, their tautomeric forms, their stereoisomers, their polymorphs, their pharmaceutically acceptable salts, their pharmaceutically acceptable solvates, novel intermediates described herein and pharmaceutically acceptable compositions containing them. This invention particularly relates to novel tetracyclic arylalkyl of the general formula (I), their derivatives, their analogues, their tautomeric forms, their stereoisomers, their polymorphs, their pharmaceutically acceptable salts, their pharmaceutically acceptable solvates, novel intermediates described herein and pharmaceutically acceptable compositions containing them. This invention also relates to process/es for preparing such compound/s of general formula (I), composition/s containing effective amount/s of such a compound and the use of such a compound/composition in therapy.Type: ApplicationFiled: June 19, 2003Publication date: September 15, 2005Applicant: SUVEN LIFE SCIENCES LIMITEDInventors: Venkateswarlu Jasti, Venkata Ramakrishna, Rama Kambhampati, Srinivasa Battula, Venkata Satya Veerabhadra Rao