Patents by Inventor Ramakrishna T. Bhatt

Ramakrishna T. Bhatt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120076927
    Abstract: A thermal treatment process for improving thermo-mechanical properties of ceramic matrix composite materials such as silicon carbide (SiC) matrix composites is described. The treatment process removes excess silicon and/or other process-related defects from the SiC-based matrix as well as the fiber interfacial coating. This invention can be practiced with minimal strength loss for as-fabricated composites formed from high-strength continuous-length ceramic and carbon-based fibers that are functionally stable to 1600° C. and above. The invention provides a method for significantly improving composite thermal conductivity and creep resistance, and for reducing composite porosity.
    Type: Application
    Filed: February 1, 2011
    Publication date: March 29, 2012
    Applicant: UNITED STATES GOVERNMENT AS REPRESENTED BY THE SECRETARY OF THE ARMY
    Inventors: Ramakrishna T. Bhatt, James A. Dicarlo
  • Patent number: 4781993
    Abstract: A strong and tough SiC/RBSN composite material comprises silicon fibers and a reaction bonded silicon nitride matrix. This composite material may be used at elevated temperatures up to at least 1400.degree. C.
    Type: Grant
    Filed: April 15, 1987
    Date of Patent: November 1, 1988
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ramakrishna T. Bhatt
  • Patent number: 4689188
    Abstract: Alternate layers of mats of specially coated SiC fibers and silicon monotapes are hot pressed in two stages: In the first a die is heated to about 600.degree. C. in a vacuum furnace and maintained at this temperature for about one-half hour to remove fugitive binder.In the second stage the die temperature is raised to about 1000.degree. C. and the layers are pressed at between 35 MPa and 138 MPa. The resulting preform is placed in a rector tube where a nitriding gas is flowed past the preform at 1100.degree. C. to 1400.degree. C. to nitride the same.
    Type: Grant
    Filed: July 16, 1986
    Date of Patent: August 25, 1987
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ramakrishna T. Bhatt