Abstract: Embodiments of the disclosure relate to a substrate processing system with improved thermal management. The substrate processing system utilizes a pyrometer for temperature measurement on the outer surface of a chamber body, and a controller to adjust operations based on estimated temperatures at various locations on the inner surface of a chamber body. The system employs a digital twin model, potentially physics-based, data-based, or a hybrid, to simulate process runs and generate temperature mappings inside the chamber body. The chamber structure features a chamber body made from high IR transmission materials and includes a chamber conditioning assembly with variable speed blowers and mechanical flow modulators. The associated method manipulates the system with the digital twin model and the chamber conditioning assembly for enhanced temperature control.

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.

Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.