Patents by Inventor Ramakrishnan Bashyam

Ramakrishnan Bashyam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PROCESS OF SELECTIVE EPITAXIAL GROWTH FOR VOID FREE GAP FILL
    Publication number: 20170125244
    Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 4, 2017
    Inventors: Ramakrishnan BASHYAM, Kazuyoshi IWAMA, Peichun LV, Carlos CABALLERO, Taisen KAWAHIRO
  • Process of selective epitaxial growth for void free gap fill
    Patent number: 9620356
    Abstract: Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: April 11, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ramakrishnan Bashyam, Kazuyoshi Iwama, Peichun Lv, Carlos Caballero, Taisen Kawahiro