Abstract: In a method for assessing a condition of a particulate filter for use in an internal combustion engine of a motor vehicle, a difference between a pressure exerted on the input side of the particulate filter and a pressure exerted on the output side of the particulate filter is recorded by a differential pressure sensor. The difference in pressure is taken into account when assessing the condition. Furthermore, the pressure exerted on the output side of the particulate filter in relation to the atmospheric pressure is recorded by a relative pressure sensor. When assessing the condition of the particulate filter, the pressure recorded by the relative pressure sensor is also taken into account. A frequency of changes in pressure and/or an amplitude load of the pressure is assessed. The invention also relates to an exhaust system for a motor vehicle.

Abstract: A fuel tank venting system for a motor vehicle includes an outlet side of a tank venting valve connected to an inlet side of a first vent line and to an inlet side of a second vent line. An outlet side of the first vent line is connected to an intake manifold upstream from a throttle valve and downstream from an air filter, and an outlet side of the second vent line is connected to the intake manifold downstream from the throttle valve. A position sensor may be located at a first position and the first closing element has a detectable element. The position sensor is connected to an electronic control device to transmit signals. A position of the first closing element may be determined by means of the position sensor and the detectable element.

Abstract: In a method for assessing a condition of a particulate filter for use in an internal combustion engine of a motor vehicle, a difference between a pressure exerted on the input side of the particulate filter and a pressure exerted on the output side of the particulate filter is recorded by a differential pressure sensor. The difference in pressure is taken into account when assessing the condition. Furthermore, the pressure exerted on the output side of the particulate filter in relation to the atmospheric pressure is recorded by a relative pressure sensor. When assessing the condition of the particulate filter, the pressure recorded by the relative pressure sensor is also taken into account. A frequency of changes in pressure and/or an amplitude load of the pressure is assessed. The invention also relates to an exhaust system for a motor vehicle.

Abstract: A fuel tank venting system for a motor vehicle includes an outlet side of a tank venting valve connected to an inlet side of a first vent line and to an inlet side of a second vent line. An outlet side of the first vent line is connected to an intake manifold upstream from a throttle valve and downstream from an air filter, and an outlet side of the second vent line is connected to the intake manifold downstream from the throttle valve. A position sensor may be located at a first position and the first closing element has a detectable element. The position sensor is connected to an electronic control device to transmit signals. A position of the first closing element may be determined by means of the position sensor and the detectable element.

Abstract: A fuel tank venting system for a motor vehicle includes an outlet side of a tank venting valve connected to an inlet side of a first vent line and to an inlet side of a second vent line. An outlet side of the first vent line is connected to an intake manifold upstream from a throttle valve and downstream from an air filter, and an outlet side of the second vent line is connected to the intake manifold downstream from the throttle valve. The first check valve has a first position sensor and the first closing element has a detectable element. The first position sensor is connected to an electronic control device to transmit signals. A position of the first closing element may be determined by means of the position sensor and the detectable element.

Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

Abstract: A method for a T-gate and salicide process that allows narrow bottom gate widths below 0.25 &mgr;m and wide top gate widths to allow silicide gate contacts on the top of the T-gate. A dummy gate composed of an insulating material is formed over the substrate. Then we form LDD regions adjacent to the dummy gate preferably by ion implanting f (I/I) impurity ions into the substrate using the dummy gate as a mask. A pad oxide layer and dielectric layer are formed over the substrate surface. The dielectric layer over the dummy gate is removed preferably by a CMP process. We then remove the dummy gate to form a gate opening exposing the substrate surface. A gate dielectric layer is formed over the substrate surface in the gate opening. We form a polysilicon layer over the dielectric layer and the substrate surface in the gate opening. The polysilicon layer is patterned to form a T-gate. The dielectric layer is removed. We forming source/drain (S/D) regions adjacent to the T-gate by an Ion implant process.