Patents by Inventor Ramamurthy Ramprasad

Ramamurthy Ramprasad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7432792
    Abstract: An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0.001 and 0.5 and is preferably between 0.01 and 0.1. This range of aspect ratio has a high ferromagnetic resonance frequency. The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: October 7, 2008
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Philippe Renaud, Ramamurthy Ramprasad
  • Publication number: 20070159285
    Abstract: An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0.001 and 0.5 and is preferably between 0.01 and 0.1. This range of aspect ratio has a high ferromagnetic resonance frequency. The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.
    Type: Application
    Filed: November 29, 2004
    Publication date: July 12, 2007
    Applicant: FREESCALE SEMICONDUCTOR, INC
    Inventors: Philippe Renaud, Ramamurthy Ramprasad
  • Patent number: 7136029
    Abstract: Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: November 14, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ramamurthy Ramprasad, Michael F. Petras, Chi Taou Tsai
  • Patent number: 7136028
    Abstract: Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties and methods for their manufacture. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: November 14, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ramamurthy Ramprasad, Michael F. Petras, Chi Taou Tsai
  • Publication number: 20060044211
    Abstract: Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.
    Type: Application
    Filed: August 27, 2004
    Publication date: March 2, 2006
    Inventors: Ramamurthy Ramprasad, Michael Petras, Chi Tsai
  • Publication number: 20060044210
    Abstract: Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties and methods for their manufacture. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.
    Type: Application
    Filed: August 27, 2004
    Publication date: March 2, 2006
    Inventors: Ramamurthy Ramprasad, Michael Petras, Chi Tsai
  • Patent number: 6943650
    Abstract: A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features (16, 42, 44, 50) formed within a dielectric matrix (14, 52). A defect feature (17, 48) is formed within the periodic array of metal features (16, 42, 44, 50) in order to create a pass band within a stop band region.
    Type: Grant
    Filed: May 29, 2003
    Date of Patent: September 13, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ramamurthy Ramprasad, Michael F. Petras
  • Publication number: 20040239451
    Abstract: A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features (16, 42, 44, 50) formed within a dielectric matrix (14, 52). A defect feature (17, 48) is formed within the periodic array of metal features (16, 42, 44, 50) in order to create a pass band within a stop band region.
    Type: Application
    Filed: May 29, 2003
    Publication date: December 2, 2004
    Inventors: Ramamurthy Ramprasad, Michael F. Petras