Patents by Inventor Raman E. Evazians

Raman E. Evazians has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming semiconductor devices having conductors with different dimensions
    Patent number: 8987862
    Abstract: A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: March 24, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Bernd E. Kastenmeier, Raman E. Evazians
  • SEMICONDUCTOR DEVICE HAVING CONDUCTORS WITH DIFFERENT DIMENSIONS AND METHOD FOR FORMING
    Publication number: 20120175733
    Abstract: A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.
    Type: Application
    Filed: January 12, 2011
    Publication date: July 12, 2012
    Inventors: BERND E. KASTENMEIER, Raman E. Evazians