Abstract: A probe element and a method of forming a probe element are provided. The probe element includes a carrier comprising biodegradable and/or bioactive material; and at least one electrode coupled to the carrier.

Abstract: A probe element and a method of forming a probe element are provided. The probe element includes a carrier comprising biodegradable and/or bioactive material; and at least one electrode coupled to the carrier.

Abstract: A method of forming a photonic crystal (PhC) structure and a PhC structure formed by such method. The method comprises forming holes in a Si-based host layer; filling the holes with a high-density plasma (HDP) deposited Si-based oxide and such that a surface of the Si-based host layer is directly covered with the Si-based oxide; performing at least a selective wet etching step for etching the Si-based oxide such that a surface of the resulting PhC structure is planarized.

Abstract: A microfluidic filtration unit for trapping particles of a predetermined nominal size present in a fluid is provided. The unit comprises a fluid chamber connected to an inlet for introducing the fluid to be filtered and an outlet for discharging filtered fluid, a filtration barrier arranged within the fluid chamber, said filtration barrier comprising a plurality of pillars arranged substantially perpendicular to the path of fluid flow when fluid is introduced into the fluid chamber, said pillars being aligned to form at least one row extending across said path of fluid flow, wherein each of said at least one row of pillars in the filtration barrier comprises at least one fine filtration section comprising a group of pillars that are spaced apart to prevent particles to be filtered from the fluid from moving between adjacent pillars, and at least one coarse filtration section comprising a group of pillars that are spaced apart to permit the movement of particles between adjacent pillars.

Abstract: A semiconductor device, having a composite barrier layer, comprising the following. A substrate has a dielectric layer formed thereover and having an opening within the dielectric layer. The opening exposes a first portion of the substrate. A composite barrier layer lines the opening. The composite barrier layer comprises: a dielectric flash layer within the opening and lining the opening wherein the dielectric flash layer does not cover the first exposed portion of the substrate; an aluminum layer over the dielectric flash layer and over the first exposed portion of the substrate; and a barrier metal layer over the aluminum layer. Wherein the dielectric flash layer, the aluminum layer and the barrier metal layer comprise the composite barrier layer. A planarized metal plug is within the barrier metal layer lined opening.

Abstract: Formation, through etching, of structures whose minimum width is less than can be achieved by optical means alone has been achieved by inserting a layer of sandwiching material between the photoresist (or hard mask if used) and the structure. By adjustment of the relative etch rates of this layer and the structure, a uniform lateral width reduction and surface smoothing of the structure is achieved.

Abstract: A method of forming a composite barrier layer comprising the following steps. A substrate having a dielectric layer formed thereover is provided. An opening exposing a first portion of the substrate is formed within the dielectric layer. A dielectric flash layer is formed within the opening and over the first exposed portion of the substrate. The dielectric flash layer lines the opening. The bottommost horizontal portion of the dielectric flash layer is removed to expose a second portion of the substrate. An aluminum layer is formed over the etched dielectric flash layer and over the second exposed portion of the substrate. A barrier metal layer is formed over the aluminum layer. The etched dielectric flash layer, the aluminum layer and the barrier metal layer comprise the composite barrier layer. A planarized metal plug is formed within the barrier metal layer lined opening.

Abstract: Formation, through etching, of structures whose minimum width is less than can be achieved by optical means alone has been achieved by inserting a layer of sandwiching material between the photoresist (or hard mask if used) and the structure. By adjustment of the relative etch rates of this layer and the structure, a uniform lateral width reduction and surface smoothing of the structure is achieved.