Abstract: A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices.

Abstract: An article includes a first surface, a second surface, and a molecular nanolayer located at an interface between the first and the second surface, where an interface toughness is a higher than 20 J m?2.

Abstract: A nanoparticle includes a metal core and an outer shell. The metal core includes a magnetic alloy of platinum and at least one additional metal. The outer shell is selected from the group consisting of silica, titania, metal nitride, and metal sulfide.

Abstract: A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices.

Abstract: Controllably aligned carbon nanotubes are grown, without the use of a predeposition catalyst, on electrically conducting templates that form an electrical contact with the nanotubes. The method allows fabrication of nanotube-based devices with built-in back-side electrical contacts on silicon and other substrate surfaces.

Abstract: A method of transforming a carbon single wall nanotube (SWNT) is provided. The method comprises exposing the SWNT to light having a power sufficient to ignite or reconstruct the SWNT such that the SWNT is ignited or reconstructed by the exposure to the light.

Abstract: A method of transforming a carbon single wall nanotube (SWNT) is provided. The method comprises exposing the SWNT to light having a power sufficient to ignite or reconstruct the SWNT such that the SWNT is ignited or reconstructed by the exposure to the light.

Abstract: The present invention provides a method for forming a diffusion barrier layer, a diffusion barrier in an integrated circuit and an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a composition comprising self-assembled monolayer subunits and a solvent; and, 3) removing the solvent. The diffusion barrier layer includes a self-assembled monolayer. The integrated circuit includes a silicon substrate, a diffusion barrier layer and a metal deposited on the diffusion barrier layer. The diffusion barrier layer in the integrated circuit is covalently attached to the silicon substrate and includes a self-assembled monolayer.

Abstract: A method of controllably aligning carbon nanotubes to a template structure to fabricate a variety of carbon nanotube containing structures and devices having desired characteristics is provided. The method allows simultaneous, selective growth of both vertically and horizontally controllably aligned nanotubes on the template structure but not on a substrate in a single process step.

Abstract: Hybrid structures include aligned carbon nanotube bundles grown on curved surfaces such as micro sized or nano sized particles or bulk substrates having micro size or nano sized protrusions. The morphology of the hybrid structures can controlled by varying the size and packing of the particles or protrusions.

Abstract: The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH—OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper).

Abstract: The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH— OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper).

Abstract: A method of transforming a carbon single wall nanotube (SWNT) is provided. The method comprises exposing the SWNT to light having a power sufficient to ignite or reconstruct the SWNT such that the SWNT is ignited or reconstructed by the exposure to the light.

Abstract: A method in a semiconductor process for forming a layer of a selected compound on a substrate of a semiconductor device. A layer of titanium is formed on the substrate as a sacrificial layer. The layer of titanium is reduced using a gaseous form of a fluorine containing compound in which the fluorine containing compound includes the selected compound that is to be formed on the substrate of the semiconductor device.