Patents by Inventor Ramanathan Srinivasan
Ramanathan Srinivasan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7101800Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.Type: GrantFiled: December 30, 2003Date of Patent: September 5, 2006Assignee: Ferro CorporationInventors: Yie-Shein Her, Ramanathan Srinivasan, Suryadevara Babu, Suresh Ramarajan
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Patent number: 7091164Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.Type: GrantFiled: July 11, 2003Date of Patent: August 15, 2006Assignees: Eastman Kodak Company, Ferro Corporation, Clarkson UniversityInventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Publication number: 20040157454Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.Type: ApplicationFiled: December 30, 2003Publication date: August 12, 2004Applicant: Ferro CorporationInventors: Yie-Shein Her, Ramanathan Srinivasan, Suryadevara Babu, Suresh Ramarajan
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Publication number: 20040051077Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.Type: ApplicationFiled: July 11, 2003Publication date: March 18, 2004Inventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Patent number: 6702954Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing a barrier layer during the fabrication of a damascene structure. The slurry according to the invention includes an agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed. In the presently most preferred embodiment of the invention, the agent that suppresses the rate at which an underlying silicon-containing dielectric layer is removed is L-lysine and/or L-arginine. The present invention also provides a method of suppressing the removal rate of an underlying silicon-containing dielectric layer during the chemical-mechanical polishing of a barrier layer in a damascene structure. The method according to the invention includes polishing the barrier layer with a slurry comprising an agent that suppresses the rate at which said underlying silicon-containing dielectric layer is removed.Type: GrantFiled: October 19, 2000Date of Patent: March 9, 2004Assignee: Ferro CorporationInventors: Yie-Shein Her, Ramanathan Srinivasan, Suryadevara Babu, Suresh Ramarajan
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Patent number: 6627107Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.Type: GrantFiled: July 10, 2002Date of Patent: September 30, 2003Assignee: Eastman Kodak CompanyInventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Patent number: 6544892Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.Type: GrantFiled: July 10, 2002Date of Patent: April 8, 2003Assignee: Eastman Kodak CompanyInventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Publication number: 20030006397Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.Type: ApplicationFiled: July 10, 2002Publication date: January 9, 2003Inventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Publication number: 20020195421Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.Type: ApplicationFiled: July 10, 2002Publication date: December 26, 2002Inventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Patent number: 6491843Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.Type: GrantFiled: March 15, 2000Date of Patent: December 10, 2002Assignees: Eastman Kodak Company, Clarkson University, Ferro CorporationInventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her
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Patent number: 6468910Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.Type: GrantFiled: December 8, 1999Date of Patent: October 22, 2002Inventors: Ramanathan Srinivasan, Suryadevara V. Babu, William G. America, Yie-Shein Her