Abstract: A dual phase high entropy boride-carbide composite for extreme environments, comprising dual phases of high entropy boride (HEB) and high entropy carbide (HEC), wherein the high entropy boride comprises (Zr—Hf—Ti—V)B2 and wherein the high entropy carbide comprises (Zr—Hf—Ti—V)C. A method of making a dual phase high entropy boride-carbide composite for extreme environments, comprising the steps of utilizing a pressureless reactive sintering process, providing a Zr—Hf—Ti—V—B4C powder blend, maintaining a low sintering temperature, allowing the Zr—Hf—Ti—V—B4C powder blend to result in HE-Alloy powder and B4C, allowing the B4C to result in 4B and C and heat, reacting the HE-Alloy powder with the B and the C, and forming a HE-boride composite and a HE-carbide composite, wherein the HE-boride composite and HE-carbide composite comprise (Zr—Hf—Ti—V)B2+(Zr—Hf—Ti—V)C.

Abstract: An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Abstract: A method of making an Al—B4C composite with Mg addition comprising providing a first mixture of B4C, Al and Mg powder, producing a powder mixture, adding Mg to the powder mixture, forming pellets, creating a composite, annealing the composite, and forming an Al—Mg—B4C composite. An Al—B4C composite with Mg addition comprising Al, Mg comprising 4 wt. %, and B4C comprising 8 wt. %. An Al—B4C composite with Mg addition made from the steps comprising providing a first mixture of B4C, Al and Mg powder, producing a powder mixture, adding Mg to the powder mixture, forming pellets, creating a composite, annealing the composite, and forming an Al—Mg—B4C composite.

Abstract: An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Abstract: A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Abstract: A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Abstract: A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.

Abstract: A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

Abstract: A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

Abstract: A method and resulting composition made by: providing boron carbide and a dopant selected from silicon, aluminum, magnesium, and beryllium; and ball milling the boron carbide with the dopant until at least one out of fifteen of the boron and/or carbon atoms of the boron carbide are substituted with the dopant.

Abstract: A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C-SiC buffer layer on Si(001) comprising a porous buffer layer of 3C-SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

Abstract: A method of producing a nanocomposite coating without gaseous precursor reactants. A non-nanocrystalline particulate containing a polymorphic material in an atmospheric phase is introduced into a high-velocity gas jet. The projected particulate is allowed to impact a substrate at a velocity effective to cause at a least a portion of the polymorphic material to transform to a nanocrystalline, high pressure phase.

Abstract: A method of producing a nanocomposite coating without gaseous precursor reactants. A non-nanocrystalline particulate containing a polymorphic material in an atmospheric phase is introduced into a high-velocity gas jet. The projected particulate is allowed to impact a substrate at a velocity effective to cause at a least a portion of the polymorphic material to transform to a nanocrystalline, high pressure phase.

Abstract: A method of producing a nanocomposite coating without gaseous precursor reactants. A non-nanocrystalline particulate containing a polymorphic material in an atmospheric phase is introduced into a high-velocity gas jet. The projected particulate is allowed to impact a substrate at a velocity effective to cause at a least a portion of the polymorphic material to transform to a nanocrystalline, high pressure phase.