Abstract: A nickel-based glassy alloy composition including Mo and one or more of Nb, Ta, and Zr, exhibiting high hardness and high crystallization temperatures.

Abstract: A melt tube assembly comprising a melt delivery tube and a supporting and insulating shield providing mechanical protection to the melt tube tip and a thermal barrier between the flowing melt and the gas atomization nozzle and the gas jets issuing therefrom during confined gas atomization. In a preferred embodiment, the melt tube tip is a separate element, easily replaceable or interchangeable without removing the melt delivery tube from the crucible.

Abstract: A method for increasing the yield of fine and ultrafine powder from a metal or metal alloy, including such high surface tension metals and alloys as copper, Fe-based alloys, Cu-Al-Fe alloys and Ni-Cr-Fe-B-Si alloys. A pressurized stream of molten metal is atomized by a cone of impinging gas streams, the apex of the gas cone being less than 50 mm from the melt outlet and 11-24 mm from the gas orifices. The gas velocity is greater than 100 m/sec, and the mass flow ratio of melt to gas is less than 0.10. The melt stream is pressurized by introducing pressurizing gas to an overpressure zone above the melt, e.g. in a sealed crucible.

Abstract: A method for producing ultrafine powder from a metal or metal alloy, including such high surface tension metals and alloys as copper, Cu-Al-Fe alloys and Ni-Cr-Fe-B-Si alloys. A stream of molten metal is atomized under aspiration conditions by a cone of impinging gas streams, the apex of the gas cone being 10-21 mm from the melt outlet and 11-24 mm from the gas orifices. The gas velocity is greater than Mach 1, and the mass flow ratio of melt to gas is less than 0.10.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

Abstract: Normally solid materials, e.g. metals or metal alloys, are provided as solid particulates, and preferably as fine spherical to almost spherical, as well as fiber-like, particulates, including solid particulates of a metallic glassy structure, by contacting a molten stream of the material, which at a temperature within 25 percent of its equilibrium melting point .degree.K. has a surface tension of 10 to 2500 dynes/cm. and a viscosity of 0.001 to 1 poise, preferably from 10.degree. C. to 100.degree. C. above its melting point, with a rapidly moving wall of a centrifugally disposed rotating liquid quench fluid, e.g. water or an oil, etc., in a manner adapted to disrupt the stream with breaking of the stream into molten globules or particles and to quench rapidly those globules or particles into the solid particulates. The produced solid particulates subsequently are separated from the liquid quench fluid and classified to find utility for example in powder metallurgical applications.

Abstract: A mass of normally solid material, e.g. metal or metal alloy, which at a temperature within 25 percent of its equilibrium melting point .degree.K has a surface tension of 10 to 2500 dynes/cm. and a viscosity of 0.001 to 1 poise, is changed into fine solid particulates, preferably flake-like to almost spherical shape. A solid mass of the material has a portion thereof, e.g. tip or edge, unconfined by a crucible or the like, heated, such as by a flame or electron beam to alter that portion to a molten state whereby molten droplets or globules fall therefrom to contact a rapidly moving wall of a centrifugally disposed rotating liquid quench fluid, e.g. water or oil, and upon contacting are disrupted and broken up into finer globules or particles which are swept away with and quenched in the rapidly moving quench fluid to become rapidly solidified as fine particulates.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-50 .mu.m thick and the semiconductor may be 10-50 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.

Abstract: A method of forming, by melt-spinning techniques, a laminated ribbon structure consisting, for example, of a semiconductor disposed on a metal ribbon substrate. The substrate may be 10-100 .mu.m thick and the semiconductor may be 10-100 .mu.m thick, for example; typically the ribbon width is about one millimeter to several centimeters.