Abstract: A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 ?m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Abstract: A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 ?m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Abstract: A wafer heater assembly comprises a heater substrate and a non-porous outermost layer. The heater substrate comprises silicon nitride (Si3N4) and includes at least one heating element embedded therein. The non-porous outermost layer is associated with at least a first surface of the heater substrate. The non-porous outermost layer comprises a rare-earth (RE) disilicate (RE2Si2O7); where RE is one of Yb and Y. The non-porous outermost layer includes an exposed surface configured to contact a wafer for heating, the exposed surface opposite the first surface of the heater substrate. Methods of making wafer heater assemblies are also disclosed as well as methods of using the wafer heater assembly.

Abstract: A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 ?m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Abstract: A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a corrosion-resistant non-porous layer associated with the ceramic insulating substrate, the corrosion-resistant non-porous layer having a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, the corrosion-resistant non-porous layer characterized by a microstructure substantially devoid of microcracks and fissures, and having an average grain size of at least about 100 nm and at most about 100 ?m. Assemblies including corrosion-resistant components and methods of making are also disclosed.

Abstract: An electrostatic chuck having an essentially flat film electrode which is essentially parallel to the chucking surface of the electrostatic chuck is fabricated by depositing a film electrode, preferably by screen printing, onto a surface of a sintered ceramic substrate. A green ceramic layer is formed or molded onto the film electrode and the resulting structure is sintered, thereby producing the electrostatic chuck.

Abstract: The volume resistivity of a body consisting essentially of aluminum nitride is reduced by exposing the body to a soak temperature of at least about 1000° C. in an atmosphere deficient in nitrogen, such as an atmosphere consisting essentially of argon. The body can be, for example, a green body of aluminum nitride powder of a densified, or sintered body, such as a polycrystalline body. An electrostatic chuck has an electrode within a chuck body. A first portion of the chuck body, at a first side of the electrode, has a volume resistivity less than about 1×1013 ohm·cm at about 23° C. A second portion of the body, at a second side of the electrode, has a volume resistivity within one order of magnitude that of the first portion.

Abstract: An electrostatic chuck includes a chuck body having a chucking surface and a back surface, an electrode within the chuck body and at least one conduit for providing fluid communication between the back surface and a chucking surface. The conduit includes a porous region which is integrated with the chuck body. During operation, the temperature of a wafer supported by the electrostatic chuck can be controlled or modified by directing a heat transfer fluid, through the porous region, to the chucking surface. The porous region prevents or minimizes plasma penetration and arcing problems. Also described are methods of fabricating an electrostatic chuck having a porous region.

Abstract: An electrostatic chuck, or susceptor, includes an electrode and/or heating element embedded in a ceramic body, and has an electrical contact extending from the electrode. The electrode or heating element can be fabricated, for example, from molybdenum and the chuck body from aluminum nitride. The electrical contact includes a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals. One example of an electrical contact includes about 99.8 weight percent molybdenum and about 0.2 weight percent nickel. Alternatively, the electrode can be fabricated from a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals.

Abstract: A ceramic heater for use as a platform or support in producing a semiconductor wafer is described. A method for use of the ceramic heater as well as a method for controlling the temperature of a semiconductor wafer is provided. In a exemplary embodiment, the heater is made from a ceramic compound which has a thermally conductive ceramic layer and a ceramic heater element. In this embodiment, the thermally conductive ceramic layer is aluminum nitride doped with oxygen at such a level that it promotes thermal conductivity. The heater may also have a thermally insulative ceramic layer comprised of a mixture of aluminum nitride with a dopant at a level that makes the aluminum nitride thermally insulating. The heater element may be embedded within the ceramic chuck in a variety of shapes and configurations as necessary and as particular to the semiconductor processing requirements.

Abstract: An electrostatic chuck having an essentially flat film electrode which is essentially parallel to the chucking surface of the electrostatic chuck is fabricated by depositing a film electrode, preferably by screen printing, onto a surface of a sintered ceramic substrate. A green ceramic layer is formed or molded onto the film electrode and the resulting structure is sintered, thereby producing the electrostatic chuck.

Abstract: Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %, in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.

Abstract: Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.

Abstract: Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.

Abstract: Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.