Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry, which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

Abstract: An apparatus includes a reactive species source, a spectral measurement volume, a light source to emit a light beam into the spectral measurement volume, a spectrometer to receive the light beam from the spectral measurement volume. The apparatus includes an a controller configured to, when a reactive species is present in the spectral measurement volume, control the light source to emit the light beam into the spectral measurement volume and the spectrometer to determine an environment spectrum using the light beam, and when the reactive species is not present in the spectral measurement volume, control the light source to emit the light beam into the spectral measurement volume and the spectrometer to determine a baseline spectrum using the light beam, calculate a net spectrum based on a difference between the environment spectrum and the baseline spectrum, and estimate a concentration of the reactive species based on the net spectrum.

Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

Abstract: An improved skylight is described that includes a plurality of compound parabolic concentrator like structures into the functional layers of the skylight to provide more visual light transmittance with less solar heat gain—more light with less heat—to wider areas of building interiors.

Abstract: Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor assembly is positioned at least partially in the body. The sensor assembly includes a transmitter, an antenna, and a vibrational sensor. The transmitter has a first end and a second end. The antenna is coupled to the first end of the transmitter. The vibrational sensor is coupled to the second end. The vibrational sensor is configured to detect vibration during chemical mechanical processes with respect to radial, azimuthal, and angular axes of the carrier head.

Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

Abstract: Embodiment disclosed herein generally relate to a method for removing aluminum fluoride contamination from semiconductor processing equipment. A method for cleaning semiconductor processing equipment is disclosed herein. The method includes maintaining a container of water at a temperature of between 50 degrees Celsius and 100 degrees Celsius and soaking a semiconductor processing equipment having surface contamination comprising aluminum fluoride in the water, wherein the semiconductor processing equipment is comprised of a material having a solubility directly related to the temperature of the water.

Abstract: Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a processing facing surface configured to face a processing region of the semiconductor process chamber, and a profile disposed on the plasma facing surface wherein the profile increases the surface area of the processing facing surface without increasing a base surface area.

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: The present invention organizes unsorted information into structured information and presents the structured information so that users are able to perform research efficiently and effectively. The present invention includes developing a parameterized template which is used to organize the unstructured data. Editors, with the help of a data analysis application, search through the unstructured information and organize the information using the parameterized template. After the information is properly organized, it is presented to users in a user-friendly format that enables users to quickly and easily search for specific elements in the information. Furthermore, the information is also presented to allow other tasks to be performed on the organized data such as comparisons.

Abstract: A method for preventing de-lamination of semiconductor wafer film stacks during a linear belt-type chemical mechanical planarization (CMP) process is provided. The method implements a pulsed polishing head rotation during a CMP process to maintain a slurry distribution across the width of a belt pad. The slurry distribution is maintained in a manner that prevents de-lamination of a wafer film having weak adhesion characteristics. Thus, the pulsed polishing head rotation implemented by the method reduces de-lamination of low-K material film layers during the CMP process.