Abstract: A method includes producing a substituted cyclosilane by combining in a solvent the following: (i) halogenated cyclosilane, (ii) at least one of tri-alkyl or tri-aryl silane, and (iii) a complexing agent that includes at least one of ammonium halide or phosphonium halide. The halogenated cyclosilane reacts to produce the substituted cyclosilane.

Abstract: A silicon nitride (SiNx) based anode is produced by combining a silicon precursor that includes cyclohexasilane and a nitrogen precursor. A doped silicon based anode is produced by combining a silicon precursor that includes cyclohexasilane and a dopant precursor selected from a boron precursor, a nitrogen precursor, a sulfur precursor, an aluminum precursor, a phosphorous precursor, and combinations thereof. Silicon nanowires are produced by depositing metallic nanoparticles on surfaces of carbon support particles and then depositing silicon from cyclohexasilane onto the carbon support particles. The silicon preferentially deposits onto the metallic nanoparticles to form silicon nanowires that extend off of the metallic nanoparticle away from the surfaces.

Abstract: A surface-modified quantum dot includes a silicon quantum dot, a polycyclic dye moiety, and a linking moiety that bonds the polycyclic dye moiety to the silicon quantum dot.

Abstract: A method includes producing a substituted cyclosilane by combining in a solvent the following: (i) halogenated cyclosilane, (ii) at least one of tri-alkyl or tri-aryl silane, and (iii) a complexing agent that includes at least one of ammonium halide or phosphonium halide. The halogenated cyclosilane reacts to produce the substituted cyclosilane.