Patents by Inventor RamGoss, Inc.

RamGoss, Inc. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130181215
    Abstract: A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.
    Type: Application
    Filed: January 16, 2013
    Publication date: July 18, 2013
    Applicant: RAMGOSS, INC.
    Inventor: RamGoss, Inc.