Patents by Inventor Rami SALEM

Rami SALEM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230325565
    Abstract: A method for simulating the combustion of a fluid in a combustion chamber, for the design of said combustion chamber, which includes: discretizing the space of the chamber into a given mesh; training a neural network by means of a learning set associating a graph corresponding to the mesh, the vertices of which have, as a value, progress variables predicted by a computational fluid dynamics simulation with local combustion quantities at these vertices; and an iterative simulation phase, where: the values predicted by the neural network of a local combustion quantity at the vertices of the mesh are provided as input to a solver, in order to obtain a value of a progress variable at each vertex of said mesh, and a graph corresponding to the vertices of the mesh is provided to said neural network, each vertex having a corresponding value of said progress variable, obtained by said solver, in order to obtain predicted values of the local combustion quantity at said vertices.
    Type: Application
    Filed: March 22, 2023
    Publication date: October 12, 2023
    Applicant: BULL SAS
    Inventors: Gaël GORET, Christophe BOVALO, Alexis GIORKALLOS, Léo NICOLETTI, Rami SALEM
  • Patent number: 10605859
    Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: March 31, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Rami Salem, Lesly Zaren V. Endrinal, Hyeokjin Lim, Hadi Bunnalim, Robert Kim, Lavakumar Ranganathan, Mickael Malabry
  • Publication number: 20180074117
    Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.
    Type: Application
    Filed: September 14, 2016
    Publication date: March 15, 2018
    Inventors: Rami SALEM, Lesly Zaren V. ENDRINAL, Hyeokjin LIM, Hadi BUNNALIM, Robert KIM, Lavakumar RANGANATHAN, Mickael MALABRY